JPS5754373A - Manufacture of mos type semiconductor device - Google Patents

Manufacture of mos type semiconductor device

Info

Publication number
JPS5754373A
JPS5754373A JP13093380A JP13093380A JPS5754373A JP S5754373 A JPS5754373 A JP S5754373A JP 13093380 A JP13093380 A JP 13093380A JP 13093380 A JP13093380 A JP 13093380A JP S5754373 A JPS5754373 A JP S5754373A
Authority
JP
Japan
Prior art keywords
gate
film
impurities
oxide film
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13093380A
Other languages
Japanese (ja)
Other versions
JPH0263297B2 (en
Inventor
Takeya Ezaki
Masabumi Kubota
Osamu Ishikawa
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13093380A priority Critical patent/JPS5754373A/en
Publication of JPS5754373A publication Critical patent/JPS5754373A/en
Publication of JPH0263297B2 publication Critical patent/JPH0263297B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To improve the accuracy of micro-miniaturization of the device by a method wherein a film is formed on a gate shaped onto a semiconductor substrate, impurities are injected at predetermined acceleration voltage, the whole is thermally treated and an impurity region is made to reach the end section of the gate. CONSTITUTION:A field oxide film, a gate oxide film and the gate electrode 4 are formed to the semiconductor substrate 1, the film 5, such as a photo-resist, a vapor- phase growth oxide film, etc. is shaped, while the impurities are injected at the acceleration voltage, where the flght distances of the impurities are appoximately the same as or larger than the thickness of the film 5, the source and drain regions 6, 6' are formed at a location distant from the gate, and the whole is thermally treated. Consequently, the source and drain regions are made to reach the end section of the gate. Accordingly, the accuracy of micro-miniaturization is improved because the impurity regions are shaped through the method of self-matching.
JP13093380A 1980-09-19 1980-09-19 Manufacture of mos type semiconductor device Granted JPS5754373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13093380A JPS5754373A (en) 1980-09-19 1980-09-19 Manufacture of mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13093380A JPS5754373A (en) 1980-09-19 1980-09-19 Manufacture of mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5754373A true JPS5754373A (en) 1982-03-31
JPH0263297B2 JPH0263297B2 (en) 1990-12-27

Family

ID=15046094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13093380A Granted JPS5754373A (en) 1980-09-19 1980-09-19 Manufacture of mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5754373A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239671A (en) * 1985-04-16 1986-10-24 Toshiba Corp Manufacture of semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166958A (en) * 1979-06-15 1980-12-26 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166958A (en) * 1979-06-15 1980-12-26 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239671A (en) * 1985-04-16 1986-10-24 Toshiba Corp Manufacture of semiconductor memory device

Also Published As

Publication number Publication date
JPH0263297B2 (en) 1990-12-27

Similar Documents

Publication Publication Date Title
GB1529297A (en) Self-aligned cmos process for bulk silicon device
JPS6445165A (en) Semiconductor device and manufacture thereof
JPS6433969A (en) Manufacture of semiconductor device
JPS57196573A (en) Manufacture of mos type semiconductor device
EP0077737A3 (en) Low capacitance field effect transistor
JPS5754373A (en) Manufacture of mos type semiconductor device
JPS5578574A (en) Manufacture of insulated-gate field-effect transistor
JPS5522831A (en) Manufacturing of semiconductor device
JPS55130170A (en) Semiconductor device and method of fabricating the same
JPS57159066A (en) Manufacture of semiconductor device
JPS55145373A (en) Fabricating method of semiconductor device
JPS5530867A (en) Method of making semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
KR100192473B1 (en) Cmos device fabricating method
JPS56147447A (en) Manufacture of mosic
JPS57201080A (en) Semiconductor device
JPS56157066A (en) Manufacture of semiconductor device
JPS55107267A (en) Manufacture of complementarity mos semiconductor device
JPS5376770A (en) Production of insulated gate field effect transistor
JPS57148374A (en) Manufacture of mos type semiconductor device
JPS5449063A (en) Semiconductor device and its manufacture
JPS56135971A (en) Manufacture of mos type semiconductor device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
KR940010308A (en) Thin film transistor and method of manufacturing the same
JPS5651871A (en) Manufacture of complementary type mos semiconductor device