JPS5753966A - Protection for metal pattern - Google Patents

Protection for metal pattern

Info

Publication number
JPS5753966A
JPS5753966A JP12973280A JP12973280A JPS5753966A JP S5753966 A JPS5753966 A JP S5753966A JP 12973280 A JP12973280 A JP 12973280A JP 12973280 A JP12973280 A JP 12973280A JP S5753966 A JPS5753966 A JP S5753966A
Authority
JP
Japan
Prior art keywords
resist
metal pattern
pattern
substrate
side face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12973280A
Other languages
Japanese (ja)
Inventor
Hideaki Shimoda
Hiroshi Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12973280A priority Critical patent/JPS5753966A/en
Publication of JPS5753966A publication Critical patent/JPS5753966A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To protect the side face of a metal pattern from corrosion by a method wherein a metal pattern is formed on a substrate using a photosensitive resin pattern, the resin is allowed to run on the substrate by heating up the substrate and the side face of the metal pattern is covered with the resin. CONSTITUTION:A resist mask 13 is applied to the Al on a wafer 11 and an Al wiring pattern 14 is formed by performing an etching using gas. Subsequently, the resist 13 is heated up to the softening temperature without exposing to the air directly and it is maintained in that state, and then the side face of the Al 14 is covered by the resist by allowing the resist 13 to run. According to this constitution, as the wafer is not exposed to the air directly, HCl is not generated even when Cl is adhered to the side surface of the Al wiring, and also even when the HCl is generated on the circumference of the resist, the Al is not corroded because it is not come in contact with the Al wiring pattern directly.
JP12973280A 1980-09-17 1980-09-17 Protection for metal pattern Pending JPS5753966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12973280A JPS5753966A (en) 1980-09-17 1980-09-17 Protection for metal pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12973280A JPS5753966A (en) 1980-09-17 1980-09-17 Protection for metal pattern

Publications (1)

Publication Number Publication Date
JPS5753966A true JPS5753966A (en) 1982-03-31

Family

ID=15016826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12973280A Pending JPS5753966A (en) 1980-09-17 1980-09-17 Protection for metal pattern

Country Status (1)

Country Link
JP (1) JPS5753966A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220428A (en) * 1988-02-28 1989-09-04 J C C Eng Kk Method and apparatus for winding electrolytic capacitor element
US5213996A (en) * 1990-07-04 1993-05-25 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for forming interconnection pattern and semiconductor device having such interconnection pattern
US5418397A (en) * 1990-07-04 1995-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having an interconnection pattern
US5459092A (en) * 1989-01-27 1995-10-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating an active matrix addressed liquid crystal image device
US10515457B2 (en) 2016-09-20 2019-12-24 Kabushiki Kaisha Toshiba Image collation system and image collation method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01220428A (en) * 1988-02-28 1989-09-04 J C C Eng Kk Method and apparatus for winding electrolytic capacitor element
US5459092A (en) * 1989-01-27 1995-10-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating an active matrix addressed liquid crystal image device
US5213996A (en) * 1990-07-04 1993-05-25 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for forming interconnection pattern and semiconductor device having such interconnection pattern
US5418397A (en) * 1990-07-04 1995-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having an interconnection pattern
US10515457B2 (en) 2016-09-20 2019-12-24 Kabushiki Kaisha Toshiba Image collation system and image collation method

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