JPS5752275A - Solid image pickup element - Google Patents

Solid image pickup element

Info

Publication number
JPS5752275A
JPS5752275A JP55125980A JP12598080A JPS5752275A JP S5752275 A JPS5752275 A JP S5752275A JP 55125980 A JP55125980 A JP 55125980A JP 12598080 A JP12598080 A JP 12598080A JP S5752275 A JPS5752275 A JP S5752275A
Authority
JP
Japan
Prior art keywords
layer
source
photodiode
drain
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55125980A
Other languages
English (en)
Inventor
Toshiki Suzuki
Michio Yamamura
Kiyoshi Tanaka
Koji Yamashita
Masayuki Hikiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55125980A priority Critical patent/JPS5752275A/ja
Publication of JPS5752275A publication Critical patent/JPS5752275A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
JP55125980A 1980-09-12 1980-09-12 Solid image pickup element Pending JPS5752275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125980A JPS5752275A (en) 1980-09-12 1980-09-12 Solid image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125980A JPS5752275A (en) 1980-09-12 1980-09-12 Solid image pickup element

Publications (1)

Publication Number Publication Date
JPS5752275A true JPS5752275A (en) 1982-03-27

Family

ID=14923739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125980A Pending JPS5752275A (en) 1980-09-12 1980-09-12 Solid image pickup element

Country Status (1)

Country Link
JP (1) JPS5752275A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146192A (ja) * 1985-12-13 1987-06-30 三菱重工業株式会社 蓋締装置
JP2004193609A (ja) * 2002-12-05 2004-07-08 Natl Semiconductor Corp <Ns> 感度およびビデオインターフェイスとの互換性が向上した、垂直カラー受光器
CN110085608A (zh) * 2019-03-12 2019-08-02 上海集成电路研发中心有限公司 一种高性能cmos成像传感器结构及其制作方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146192A (ja) * 1985-12-13 1987-06-30 三菱重工業株式会社 蓋締装置
JPH0543598B2 (ja) * 1985-12-13 1993-07-02 Mitsubishi Heavy Ind Ltd
JP2004193609A (ja) * 2002-12-05 2004-07-08 Natl Semiconductor Corp <Ns> 感度およびビデオインターフェイスとの互換性が向上した、垂直カラー受光器
CN110085608A (zh) * 2019-03-12 2019-08-02 上海集成电路研发中心有限公司 一种高性能cmos成像传感器结构及其制作方法
CN110085608B (zh) * 2019-03-12 2021-05-18 上海集成电路研发中心有限公司 一种高性能cmos成像传感器结构及其制作方法

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