JPS5750466A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5750466A
JPS5750466A JP55126900A JP12690080A JPS5750466A JP S5750466 A JPS5750466 A JP S5750466A JP 55126900 A JP55126900 A JP 55126900A JP 12690080 A JP12690080 A JP 12690080A JP S5750466 A JPS5750466 A JP S5750466A
Authority
JP
Japan
Prior art keywords
layer
electrode
dielectric
capacitor
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55126900A
Other languages
English (en)
Other versions
JPH0158667B2 (ja
Inventor
Kanetake Takasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55126900A priority Critical patent/JPS5750466A/ja
Publication of JPS5750466A publication Critical patent/JPS5750466A/ja
Publication of JPH0158667B2 publication Critical patent/JPH0158667B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP55126900A 1980-09-12 1980-09-12 Semiconductor memory device Granted JPS5750466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55126900A JPS5750466A (en) 1980-09-12 1980-09-12 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55126900A JPS5750466A (en) 1980-09-12 1980-09-12 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5750466A true JPS5750466A (en) 1982-03-24
JPH0158667B2 JPH0158667B2 (ja) 1989-12-13

Family

ID=14946656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55126900A Granted JPS5750466A (en) 1980-09-12 1980-09-12 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5750466A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198665A (ja) * 1985-02-27 1986-09-03 Nec Corp 半導体装置
JPS629666A (ja) * 1985-07-05 1987-01-17 Nec Corp 半導体装置
JPS62195256A (ja) * 1986-02-20 1987-08-28 Imuraya Seika Kk 包装餅の製造方法
KR100225556B1 (ko) * 1991-07-10 1999-10-15 이데이 노부유끼 반도체기억장치의 커패시터 및 그 제조방법
GB2364825A (en) * 1999-12-23 2002-02-06 Hyundai Electronics Ind A capacitor using a tantalum nitride dielectric
KR100355610B1 (ko) * 2000-12-29 2002-10-12 주식회사 하이닉스반도체 커패시터의 유전층 형성방법
JP2010129690A (ja) * 2008-11-26 2010-06-10 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133089A (en) * 1978-04-06 1979-10-16 Nec Corp Thin film capacitor and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54133089A (en) * 1978-04-06 1979-10-16 Nec Corp Thin film capacitor and its manufacture

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198665A (ja) * 1985-02-27 1986-09-03 Nec Corp 半導体装置
JPS629666A (ja) * 1985-07-05 1987-01-17 Nec Corp 半導体装置
JPS62195256A (ja) * 1986-02-20 1987-08-28 Imuraya Seika Kk 包装餅の製造方法
KR100225556B1 (ko) * 1991-07-10 1999-10-15 이데이 노부유끼 반도체기억장치의 커패시터 및 그 제조방법
GB2364825A (en) * 1999-12-23 2002-02-06 Hyundai Electronics Ind A capacitor using a tantalum nitride dielectric
GB2364825B (en) * 1999-12-23 2004-04-14 Hyundai Electronics Ind Method for fabricating semiconductor device capacitors
KR100355610B1 (ko) * 2000-12-29 2002-10-12 주식회사 하이닉스반도체 커패시터의 유전층 형성방법
JP2010129690A (ja) * 2008-11-26 2010-06-10 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0158667B2 (ja) 1989-12-13

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