JPS5750465A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5750465A
JPS5750465A JP55126302A JP12630280A JPS5750465A JP S5750465 A JPS5750465 A JP S5750465A JP 55126302 A JP55126302 A JP 55126302A JP 12630280 A JP12630280 A JP 12630280A JP S5750465 A JPS5750465 A JP S5750465A
Authority
JP
Japan
Prior art keywords
layer
lift
dielectric
capacitor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55126302A
Other languages
Japanese (ja)
Inventor
Kanetake Takasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55126302A priority Critical patent/JPS5750465A/en
Publication of JPS5750465A publication Critical patent/JPS5750465A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce the area occupied by a capacitor in a 1-transistor memory, by a method wherein a tantalum oxid layer is employed, which is formed by employing a magnetron sputtering process, and a part of the layer is removed by using a lift- off process. CONSTITUTION:A dielectric 5 made of tantalum oxide is formed so as to have a thickness of about 1,000Angstrom by means of a magnetron sputtering process. With the necessary part left, the remaining is removed by means of a lift-off process. In this 1-transistor memory, a capacitor is formed so as to be adjacent to a drain region 14 of a transistor. One electrode thereof is the region continued to the drain region, the dielectric 5 is the tantalum oxide layer 5 deposited thereon, and the other electrode is a polycrystalline silicon layer 6 additionally deposited thereon and has an excellent characteristic against alpha rays and a high degree of integration attributable to a large electrostatic capacitance.
JP55126302A 1980-09-11 1980-09-11 Semiconductor memory device Pending JPS5750465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55126302A JPS5750465A (en) 1980-09-11 1980-09-11 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55126302A JPS5750465A (en) 1980-09-11 1980-09-11 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5750465A true JPS5750465A (en) 1982-03-24

Family

ID=14931830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55126302A Pending JPS5750465A (en) 1980-09-11 1980-09-11 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5750465A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110685U (en) * 1984-06-26 1986-01-22 大阪瓦斯株式会社 Frozen packaging for rice bowls
DE3526477A1 (en) * 1985-07-24 1987-02-05 Gea Luftkuehler Happel Gmbh Coke battery

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147465A (en) * 1977-05-27 1978-12-22 Fujitsu Ltd Forming method of patterns for lift-off
JPS5467372A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Production of semiconductor device
JPS54133089A (en) * 1978-04-06 1979-10-16 Nec Corp Thin film capacitor and its manufacture
JPS5565458A (en) * 1978-11-10 1980-05-16 Nec Corp Memory cell
JPS5568674A (en) * 1978-11-20 1980-05-23 Fujitsu Ltd Fabrication of charge coupled device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147465A (en) * 1977-05-27 1978-12-22 Fujitsu Ltd Forming method of patterns for lift-off
JPS5467372A (en) * 1977-11-09 1979-05-30 Hitachi Ltd Production of semiconductor device
JPS54133089A (en) * 1978-04-06 1979-10-16 Nec Corp Thin film capacitor and its manufacture
JPS5565458A (en) * 1978-11-10 1980-05-16 Nec Corp Memory cell
JPS5568674A (en) * 1978-11-20 1980-05-23 Fujitsu Ltd Fabrication of charge coupled device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110685U (en) * 1984-06-26 1986-01-22 大阪瓦斯株式会社 Frozen packaging for rice bowls
JPH0226316Y2 (en) * 1984-06-26 1990-07-18
DE3526477A1 (en) * 1985-07-24 1987-02-05 Gea Luftkuehler Happel Gmbh Coke battery

Similar Documents

Publication Publication Date Title
JPS5681968A (en) Manufacture of semiconductor device
JPS56135968A (en) Amorphous silicon thin film transistor and manufacture thereof
JPS57120295A (en) Semiconductor memory device
JPS5355986A (en) Manufacture of semiconductor device
JPS57194567A (en) Semiconductor memory device
JPS6441262A (en) Memory cell
JPS5750465A (en) Semiconductor memory device
GB2016803A (en) Thin film transistor construction and manufacturing method of the same
JPS55154762A (en) Semiconductor memory
JPS58134458A (en) Manufacture of capacitor in semiconductor device
JPS5750466A (en) Semiconductor memory device
JPS5387681A (en) Semiconductor memory device
JPS5565458A (en) Memory cell
JPS5769778A (en) Semiconductor device
JPS6480066A (en) Semiconductor integrated circuit device
JPS5789246A (en) Fabrication of semiconductor device
JPS56138946A (en) Semiconductor device
JPS6425555A (en) Trench forming method
KR960016638B1 (en) Active matrix liquid crystal display and its making method
JPS6477158A (en) Memory device
KR910020937A (en) Manufacturing method of stacked capacitor cell
GB1521625A (en) Semiconductor devices
JPS56161669A (en) Manufacture of semiconductor device
JPS57126183A (en) Josephson junction element
KR920001717A (en) Manufacturing method of stack capacitor of DRAM cell