JPS5750435A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS5750435A
JPS5750435A JP12633380A JP12633380A JPS5750435A JP S5750435 A JPS5750435 A JP S5750435A JP 12633380 A JP12633380 A JP 12633380A JP 12633380 A JP12633380 A JP 12633380A JP S5750435 A JPS5750435 A JP S5750435A
Authority
JP
Japan
Prior art keywords
electrode
etching
grounding
bias voltage
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12633380A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136247B2 (enrdf_load_html_response
Inventor
Takashi Yamazaki
Tetsuo Kurisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12633380A priority Critical patent/JPS5750435A/ja
Publication of JPS5750435A publication Critical patent/JPS5750435A/ja
Publication of JPH0136247B2 publication Critical patent/JPH0136247B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP12633380A 1980-09-11 1980-09-11 Plasma etching device Granted JPS5750435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12633380A JPS5750435A (en) 1980-09-11 1980-09-11 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12633380A JPS5750435A (en) 1980-09-11 1980-09-11 Plasma etching device

Publications (2)

Publication Number Publication Date
JPS5750435A true JPS5750435A (en) 1982-03-24
JPH0136247B2 JPH0136247B2 (enrdf_load_html_response) 1989-07-31

Family

ID=14932579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12633380A Granted JPS5750435A (en) 1980-09-11 1980-09-11 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS5750435A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214429A (ja) * 1985-07-12 1987-01-23 Hitachi Ltd 表面処理方法及び表面処理装置
JPH01170387A (ja) * 1987-12-22 1989-07-05 Yaskawa Electric Mfg Co Ltd 電動機の同期運転方式
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS53114679A (en) * 1977-03-17 1978-10-06 Fujitsu Ltd Plasm etching unit
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS53114679A (en) * 1977-03-17 1978-10-06 Fujitsu Ltd Plasm etching unit
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214429A (ja) * 1985-07-12 1987-01-23 Hitachi Ltd 表面処理方法及び表面処理装置
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor
JPH01170387A (ja) * 1987-12-22 1989-07-05 Yaskawa Electric Mfg Co Ltd 電動機の同期運転方式

Also Published As

Publication number Publication date
JPH0136247B2 (enrdf_load_html_response) 1989-07-31

Similar Documents

Publication Publication Date Title
JPS56105482A (en) Plasma etching device
JPS5435172A (en) Chemical reactor using electric discharge
JPS57131374A (en) Plasma etching device
JPS56152973A (en) Sputter etching device
DE3574431D1 (en) A compact low-pressure mercury vapour discharge lamp and a method for its manufacture
JPS5750435A (en) Plasma etching device
JPS53136374A (en) Low pressure vapor discharge lamp
JPS52127168A (en) Etching unit
JPS57117240A (en) High-frequency sputtering etching device
GB821744A (en) Plasma generator
JPS6489126A (en) Vacuum valve
US2515361A (en) Electric discharge device
JPS52122284A (en) Sputtering device having bias electrode
JPS54107893A (en) Ozonizer
JPS51150093A (en) Gas insulating bushing
JPS5647574A (en) Plasma etching apparatus
JPS57132082A (en) Wristwatch with radio set
JPS5272953A (en) Heating equipment used micro wave
JPS5257543A (en) High frequency heater
JPS5210939A (en) High frequency heating device
JPS53125971A (en) Plasma apparatus
GB1319042A (en) Cold cathode gas discharge tubes
GB823072A (en) Improvements in or relating to the utilization of a plasma of ions to produce high temperature
JPS5384199A (en) Insulating ceramic
JPS5458696A (en) Ozonizer