JPS5749252A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5749252A
JPS5749252A JP12486480A JP12486480A JPS5749252A JP S5749252 A JPS5749252 A JP S5749252A JP 12486480 A JP12486480 A JP 12486480A JP 12486480 A JP12486480 A JP 12486480A JP S5749252 A JPS5749252 A JP S5749252A
Authority
JP
Japan
Prior art keywords
hole
elements
film
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12486480A
Other languages
English (en)
Inventor
Masahiro Hagio
Shutaro Nanbu
Kazuhide Goda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP12486480A priority Critical patent/JPS5749252A/ja
Publication of JPS5749252A publication Critical patent/JPS5749252A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
JP12486480A 1980-09-09 1980-09-09 Manufacture of semiconductor device Pending JPS5749252A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12486480A JPS5749252A (en) 1980-09-09 1980-09-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12486480A JPS5749252A (en) 1980-09-09 1980-09-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5749252A true JPS5749252A (en) 1982-03-23

Family

ID=14895980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12486480A Pending JPS5749252A (en) 1980-09-09 1980-09-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5749252A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2566581A1 (fr) * 1984-06-22 1985-12-27 Telettra Lab Telefon Procede de mise a la masse de dispositifs semi-conducteurs plans et de circuits integres, et produits ainsi obtenus
US5434094A (en) * 1988-07-01 1995-07-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a field effect transistor
JPH07193122A (ja) * 1993-12-27 1995-07-28 Nec Corp 半導体装置の製造方法
FR2794570A1 (fr) * 1999-06-04 2000-12-08 Gemplus Card Int Procede de fabrication de dispositif portable a circuit integre avec chemins de conduction electrique
US6214639B1 (en) 1998-12-03 2001-04-10 Fujitsu Limited Method of producing a semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367374A (en) * 1976-11-27 1978-06-15 Nec Corp Manufacture of schottky barrier field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367374A (en) * 1976-11-27 1978-06-15 Nec Corp Manufacture of schottky barrier field effect transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2566581A1 (fr) * 1984-06-22 1985-12-27 Telettra Lab Telefon Procede de mise a la masse de dispositifs semi-conducteurs plans et de circuits integres, et produits ainsi obtenus
US5434094A (en) * 1988-07-01 1995-07-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a field effect transistor
JPH07193122A (ja) * 1993-12-27 1995-07-28 Nec Corp 半導体装置の製造方法
US6214639B1 (en) 1998-12-03 2001-04-10 Fujitsu Limited Method of producing a semiconductor device
FR2794570A1 (fr) * 1999-06-04 2000-12-08 Gemplus Card Int Procede de fabrication de dispositif portable a circuit integre avec chemins de conduction electrique
WO2000075985A1 (fr) * 1999-06-04 2000-12-14 Gemplus Procede de fabrication de dispositif portable a circuit integre avec chemins de conduction electrique

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