JPS5749227A - Liquid phase epitaxially growing method - Google Patents

Liquid phase epitaxially growing method

Info

Publication number
JPS5749227A
JPS5749227A JP55125609A JP12560980A JPS5749227A JP S5749227 A JPS5749227 A JP S5749227A JP 55125609 A JP55125609 A JP 55125609A JP 12560980 A JP12560980 A JP 12560980A JP S5749227 A JPS5749227 A JP S5749227A
Authority
JP
Japan
Prior art keywords
liquid
substrate
approx
grown
epitaxially growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55125609A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6150373B2 (enExample
Inventor
Ryoichi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55125609A priority Critical patent/JPS5749227A/ja
Publication of JPS5749227A publication Critical patent/JPS5749227A/ja
Publication of JPS6150373B2 publication Critical patent/JPS6150373B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP55125609A 1980-09-09 1980-09-09 Liquid phase epitaxially growing method Granted JPS5749227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125609A JPS5749227A (en) 1980-09-09 1980-09-09 Liquid phase epitaxially growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125609A JPS5749227A (en) 1980-09-09 1980-09-09 Liquid phase epitaxially growing method

Publications (2)

Publication Number Publication Date
JPS5749227A true JPS5749227A (en) 1982-03-23
JPS6150373B2 JPS6150373B2 (enExample) 1986-11-04

Family

ID=14914335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125609A Granted JPS5749227A (en) 1980-09-09 1980-09-09 Liquid phase epitaxially growing method

Country Status (1)

Country Link
JP (1) JPS5749227A (enExample)

Also Published As

Publication number Publication date
JPS6150373B2 (enExample) 1986-11-04

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