GB1332389A - Preparation of gap-si heterojunction by liquid phase epitaxy - Google Patents
Preparation of gap-si heterojunction by liquid phase epitaxyInfo
- Publication number
- GB1332389A GB1332389A GB4114571A GB4114571A GB1332389A GB 1332389 A GB1332389 A GB 1332389A GB 4114571 A GB4114571 A GB 4114571A GB 4114571 A GB4114571 A GB 4114571A GB 1332389 A GB1332389 A GB 1332389A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- solution
- silicon
- gallium phosphide
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Abstract
1332389 Epitaxial growth on substrates VARIAN ASSOCIATES 3 Sept 1971 [24 Sept 1970] 41145/71 Heading B1S [Also in Division H1] Gallium phosphide is epitaxially grown on a silicon substrate by bringing a solution of gallium phosphide in a solvent consisting of tin and/or lead into contact with the substrate and then lowering the temperature of the solution-substrate interface. Typically the substrate has a 111 or 100 orientated surface and the solvent saturated with both gallium phosphide and silicon. The solution can be prepared in two separate heatings, in which the phosphide and silicon respectively are added to the solvent followed by quenching, though all components of the melt may be mixed by a single heating in a tiltable boat with the substrate at the opposite end of the boat which is then tilted to flow the solution on the silicon for the duration of the growth period. Alternatively the substrate is dipped into the solution. Either the substrate is at a lower temperature than the solution when contacted or its temperature is subsequently lowered sufficiently to give the required epitaxial layer thickness, typically 10Á. The silicon may form part of an integrated circuit.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US00075001A US3810794A (en) | 1970-09-24 | 1970-09-24 | Preparation of gap-si heterojunction by liquid phase epitaxy |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1332389A true GB1332389A (en) | 1973-10-03 |
Family
ID=22122925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4114571A Expired GB1332389A (en) | 1970-09-24 | 1971-09-03 | Preparation of gap-si heterojunction by liquid phase epitaxy |
Country Status (5)
Country | Link |
---|---|
US (1) | US3810794A (en) |
DE (1) | DE2144828A1 (en) |
FR (1) | FR2108499A5 (en) |
GB (1) | GB1332389A (en) |
NL (1) | NL7113128A (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4128440A (en) * | 1978-04-24 | 1978-12-05 | General Electric Company | Liquid phase epitaxial method of covering buried regions for devices |
US4591408A (en) * | 1982-11-16 | 1986-05-27 | Stauffer Chemical Company | Liquid phase growth of crystalline polyphosphide |
WO1987007313A1 (en) * | 1986-05-28 | 1987-12-03 | Massachusetts Institute Of Technology | Epitaxial growth |
US4764350A (en) * | 1986-10-08 | 1988-08-16 | The United States Of America As Represented By The Secretary Of The Air Force | Method and apparatus for synthesizing a single crystal of indium phosphide |
US5057287A (en) * | 1988-11-01 | 1991-10-15 | Sfa, Inc. | Liquid encapsulated zone melting crystal growth method and apparatus |
JP2678405B2 (en) * | 1991-02-13 | 1997-11-17 | 株式会社小糸製作所 | Lighting device for automobile discharge lamp |
DE4310612C1 (en) * | 1993-03-31 | 1994-11-10 | Max Planck Gesellschaft | Liquid phase heteroepitaxy method |
-
1970
- 1970-09-24 US US00075001A patent/US3810794A/en not_active Expired - Lifetime
-
1971
- 1971-09-03 GB GB4114571A patent/GB1332389A/en not_active Expired
- 1971-09-08 DE DE19712144828 patent/DE2144828A1/en active Pending
- 1971-09-23 NL NL7113128A patent/NL7113128A/xx unknown
- 1971-09-24 FR FR7134385A patent/FR2108499A5/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2144828A1 (en) | 1972-03-30 |
US3810794A (en) | 1974-05-14 |
FR2108499A5 (en) | 1972-05-19 |
NL7113128A (en) | 1972-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |