JPS5747871A - Sputtering target - Google Patents

Sputtering target

Info

Publication number
JPS5747871A
JPS5747871A JP12240580A JP12240580A JPS5747871A JP S5747871 A JPS5747871 A JP S5747871A JP 12240580 A JP12240580 A JP 12240580A JP 12240580 A JP12240580 A JP 12240580A JP S5747871 A JPS5747871 A JP S5747871A
Authority
JP
Japan
Prior art keywords
sputtering
film
holes
target
forming speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12240580A
Other languages
Japanese (ja)
Inventor
Kazuo Sunahara
Hideo Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12240580A priority Critical patent/JPS5747871A/en
Publication of JPS5747871A publication Critical patent/JPS5747871A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a film with high uniformity in the composition at a high film- forming speed by always making the area of a section parallel to the sputtering face of plural kinds of elemental metals forming a region constant. CONSTITUTION:A plurality of through holes 1a are pierced in a metallic plate 1 of In or the like. Rods 2 of the 2nd elemental metal such as Sn almost equal to the holes 1a in diameter are forced to be inserted in the holes 1a to form a sputtering target 3. Since each m.p. is not dropped by alloying, large electric power can be supplied, and a high film-forming speed is attained. Even if the target is reduced by sputtering, the ratio in surface area between the 1st and 2nd elemental metals 1, 2 on the sputtering face 3a is not changed, so that compositional ratio of the film undergoes no change.
JP12240580A 1980-09-05 1980-09-05 Sputtering target Pending JPS5747871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12240580A JPS5747871A (en) 1980-09-05 1980-09-05 Sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12240580A JPS5747871A (en) 1980-09-05 1980-09-05 Sputtering target

Publications (1)

Publication Number Publication Date
JPS5747871A true JPS5747871A (en) 1982-03-18

Family

ID=14834978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12240580A Pending JPS5747871A (en) 1980-09-05 1980-09-05 Sputtering target

Country Status (1)

Country Link
JP (1) JPS5747871A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442576A (en) * 1987-08-10 1989-02-14 Fujitsu Ltd Composite sputtering target
WO2002012584A3 (en) * 2000-08-08 2002-04-25 Cemecon Ceramic Metal Coatings Sputtertarget

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442576A (en) * 1987-08-10 1989-02-14 Fujitsu Ltd Composite sputtering target
WO2002012584A3 (en) * 2000-08-08 2002-04-25 Cemecon Ceramic Metal Coatings Sputtertarget
US6852201B2 (en) 2000-08-08 2005-02-08 Cemecon Ag Sputter target and method of using a sputter target

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