JPS574176A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPS574176A
JPS574176A JP7720280A JP7720280A JPS574176A JP S574176 A JPS574176 A JP S574176A JP 7720280 A JP7720280 A JP 7720280A JP 7720280 A JP7720280 A JP 7720280A JP S574176 A JPS574176 A JP S574176A
Authority
JP
Japan
Prior art keywords
solar cell
melting point
low melting
antireflection film
covered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7720280A
Other languages
Japanese (ja)
Other versions
JPS618593B2 (en
Inventor
Kesao Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP7720280A priority Critical patent/JPS574176A/en
Publication of JPS574176A publication Critical patent/JPS574176A/en
Publication of JPS618593B2 publication Critical patent/JPS618593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To manufacture the solar cell compactly and in excellent mass-producing capacity by a method wherein a metallic layer of an electrode pad section for wiring extracted to the outside is formed, and the whole surface of a solar cell element containing the pad section is covered with an antireflection film. CONSTITUTION:The solar cell to which an ohmic electrode at the light receiving surface side is made up is entered into a metallic tank with the low melting point so that the electrode pad 46 side for the wiring extracted to the outside is directed downward, and contacted with metal with the melting point lower than a soldering material used for soldering the pad 46 and the melted wiring and pulled up, and the metallic layer 47 with the low melting point is formed on the surface of the pad section 46. An SiO film 48 is covered according to a sputtering method, using the surface of the solar cell to which the metallic layer 47 is built up as the antireflection film. A lead wire is soldered with the soldering material of an indium, tin and lead group alloy by means of a soldering iron 49. Accordingly, a large number of metallic sheets with the low melting point can be formed at the same time, and the whole surface of the antireflection film can be covered without a mask.
JP7720280A 1980-06-10 1980-06-10 Manufacture of solar cell Granted JPS574176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7720280A JPS574176A (en) 1980-06-10 1980-06-10 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7720280A JPS574176A (en) 1980-06-10 1980-06-10 Manufacture of solar cell

Publications (2)

Publication Number Publication Date
JPS574176A true JPS574176A (en) 1982-01-09
JPS618593B2 JPS618593B2 (en) 1986-03-15

Family

ID=13627234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7720280A Granted JPS574176A (en) 1980-06-10 1980-06-10 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPS574176A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096014A1 (en) * 2006-12-25 2010-04-22 Hideyo Iida Conductive paste for solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096014A1 (en) * 2006-12-25 2010-04-22 Hideyo Iida Conductive paste for solar cell

Also Published As

Publication number Publication date
JPS618593B2 (en) 1986-03-15

Similar Documents

Publication Publication Date Title
EP0136034A3 (en) Method of forming an electrically conductive member
JPS574176A (en) Manufacture of solar cell
JPS5512660A (en) Enclosed battery
JPS5483612A (en) Consumable electrode containing low melting point alloying elements for refining alloy
JPS55108757A (en) Semiconductor device
JPS5411487A (en) Lead conductor welding
JPS5745980A (en) Amorphous solar battery and manufacture thereof
JPS56114384A (en) Solar battery
JPS52152165A (en) Formation of solder bump electrode
JPS56114358A (en) Semiconductor device and manufacture
JPS5766622A (en) Formation of cdte film
JPS56130977A (en) Solar battery
JPS5661175A (en) Thin-film solar cell
JPS56167372A (en) Solar cell
JPS5784166A (en) 3-5 group compound semiconductor device
JPS646374A (en) Lead storage battery
JPS5782942A (en) Display tube
JPS54159197A (en) Liquid crystal display element
JPS5758333A (en) Manufacture of semiconductor device
JPS5659423A (en) Manufacture of frame electrode
JPS53108832A (en) Manufacture of tin or solder-plated wire
JPS5687333A (en) Semiconductor device
JPS5662341A (en) Formation of bump electrode
JPS5683036A (en) Glass passivation of mesa type semiconductor device
JPS5419690A (en) Electrode of semiconductor devices