JPS5740938A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5740938A
JPS5740938A JP55117390A JP11739080A JPS5740938A JP S5740938 A JPS5740938 A JP S5740938A JP 55117390 A JP55117390 A JP 55117390A JP 11739080 A JP11739080 A JP 11739080A JP S5740938 A JPS5740938 A JP S5740938A
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
psg
laser beam
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55117390A
Other languages
Japanese (ja)
Inventor
Tsuneaki Isozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55117390A priority Critical patent/JPS5740938A/en
Publication of JPS5740938A publication Critical patent/JPS5740938A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make the glass layer highly minute as well as to improve the dampproof property for the subject semiconductor device by a method wherein a laser beam is irradiated on the phosphor silicate glass layer provided on a semiconductor substrate. CONSTITUTION:After an Al wiring layer 4 has been provided on the semiconductor substrate 1 having an impurity diffusion layer 2 throuth the intermediary of an SiO2 film 3, and on the surface of which, the phosphor silicate glass (PSG) layer 5 is provided using chemical vapor deposition (CVD) and then the surface 5' of the PSG layer is highly minute irradiating a xenon helium laser beam of the wavelength of around 3.5mum on the above PSG layer. Through these procedures, the dampproof property of a protective film is improved and the reliability of the semiconductor device can also be improved.
JP55117390A 1980-08-26 1980-08-26 Manufacture of semiconductor device Pending JPS5740938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55117390A JPS5740938A (en) 1980-08-26 1980-08-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55117390A JPS5740938A (en) 1980-08-26 1980-08-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5740938A true JPS5740938A (en) 1982-03-06

Family

ID=14710459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55117390A Pending JPS5740938A (en) 1980-08-26 1980-08-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740938A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103346A (en) * 1982-11-18 1984-06-14 テキサス・インスツルメンツ・インコ−ポレイテツド Method of selectively heating insulator layer on semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836599A (en) * 1971-09-13 1973-05-30
JPS5272577A (en) * 1975-12-13 1977-06-17 Toshiba Corp Semiconductor device
JPS5526619A (en) * 1978-08-15 1980-02-26 Toshiba Corp Method of producing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836599A (en) * 1971-09-13 1973-05-30
JPS5272577A (en) * 1975-12-13 1977-06-17 Toshiba Corp Semiconductor device
JPS5526619A (en) * 1978-08-15 1980-02-26 Toshiba Corp Method of producing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103346A (en) * 1982-11-18 1984-06-14 テキサス・インスツルメンツ・インコ−ポレイテツド Method of selectively heating insulator layer on semiconductor device

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