JPS5740931A - Plasma processing device - Google Patents

Plasma processing device

Info

Publication number
JPS5740931A
JPS5740931A JP11664380A JP11664380A JPS5740931A JP S5740931 A JPS5740931 A JP S5740931A JP 11664380 A JP11664380 A JP 11664380A JP 11664380 A JP11664380 A JP 11664380A JP S5740931 A JPS5740931 A JP S5740931A
Authority
JP
Japan
Prior art keywords
wafer
gas
section
concaved
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11664380A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023294B2 (cs
Inventor
Shuji Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11664380A priority Critical patent/JPS5740931A/ja
Publication of JPS5740931A publication Critical patent/JPS5740931A/ja
Publication of JPH023294B2 publication Critical patent/JPH023294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP11664380A 1980-08-25 1980-08-25 Plasma processing device Granted JPS5740931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11664380A JPS5740931A (en) 1980-08-25 1980-08-25 Plasma processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11664380A JPS5740931A (en) 1980-08-25 1980-08-25 Plasma processing device

Publications (2)

Publication Number Publication Date
JPS5740931A true JPS5740931A (en) 1982-03-06
JPH023294B2 JPH023294B2 (cs) 1990-01-23

Family

ID=14692281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11664380A Granted JPS5740931A (en) 1980-08-25 1980-08-25 Plasma processing device

Country Status (1)

Country Link
JP (1) JPS5740931A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114127U (cs) * 1984-12-27 1986-07-18
US4738748A (en) * 1983-09-30 1988-04-19 Fujitsu Limited Plasma processor and method for IC fabrication
US4893502A (en) * 1987-08-03 1990-01-16 Hitachi, Ltd. Angle sensor for throttle valve of internal combustion engine
JPH02110927A (ja) * 1989-09-27 1990-04-24 Hitachi Ltd 真空処理装置の試料保持方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738748A (en) * 1983-09-30 1988-04-19 Fujitsu Limited Plasma processor and method for IC fabrication
JPS61114127U (cs) * 1984-12-27 1986-07-18
US4893502A (en) * 1987-08-03 1990-01-16 Hitachi, Ltd. Angle sensor for throttle valve of internal combustion engine
JPH02110927A (ja) * 1989-09-27 1990-04-24 Hitachi Ltd 真空処理装置の試料保持方法

Also Published As

Publication number Publication date
JPH023294B2 (cs) 1990-01-23

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