JPS6425539A - Wet treating apparatus - Google Patents
Wet treating apparatusInfo
- Publication number
- JPS6425539A JPS6425539A JP18109387A JP18109387A JPS6425539A JP S6425539 A JPS6425539 A JP S6425539A JP 18109387 A JP18109387 A JP 18109387A JP 18109387 A JP18109387 A JP 18109387A JP S6425539 A JPS6425539 A JP S6425539A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- treating
- well
- treated
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE:To make it possible to suppress dispersion in etching amount, by connecting a jetting path to the bottom part of a funnel shaped treating well so that treating liquid is jetted upward, and bringing the surface to be treated of a material to be treated into contact with the surface of the treating liquid formed in said treating well. CONSTITUTION:Etching liquid 2 as treating liquid is jetted upward from a jetting path 5 into a funnel shaped treating well 4 with a feeding circuit 7. Under the state the funnel shaped treating well 4 is filled with the etching liquid 2 fully, the etching liquid 2 spreads in a radial pattern from the central part to the peripheral part and flows. The liquid overflows into overflow well 6. A wafer 1 as a material to be treated is sucked and held with a sucking head 11 so that the surface to be treated faces the liquid. The surface to be treated is concentrically moved directly on the funnel shaped treating well 4 and brought into contact with the surface layer of the etching liquid 2 in the treating well 4. The wafer is rotated with the sucking head 11. Since the treating well 4, on which the surface of the etching liquid 2 is formed, is formed in the funnel shape, the flow speed of the surface of the etching liquid, where etching is performed, becomes equal as a whole from the center to the peripheral part. The substituting rate of the etching liquid is made uniform.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18109387A JPS6425539A (en) | 1987-07-22 | 1987-07-22 | Wet treating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18109387A JPS6425539A (en) | 1987-07-22 | 1987-07-22 | Wet treating apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425539A true JPS6425539A (en) | 1989-01-27 |
Family
ID=16094706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18109387A Pending JPS6425539A (en) | 1987-07-22 | 1987-07-22 | Wet treating apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425539A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03272140A (en) * | 1990-03-22 | 1991-12-03 | Fujitsu Ltd | Chemical treater for semiconductor substrate |
US6497241B1 (en) * | 1999-12-23 | 2002-12-24 | Lam Research Corporation | Hollow core spindle and spin, rinse, and dry module including the same |
JP2003035372A (en) * | 2001-07-23 | 2003-02-07 | Nok Corp | Sealing device |
WO2003080898A1 (en) * | 2002-03-25 | 2003-10-02 | Ebara Corporation | Electrochemical machine and electrochemical machining method |
-
1987
- 1987-07-22 JP JP18109387A patent/JPS6425539A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03272140A (en) * | 1990-03-22 | 1991-12-03 | Fujitsu Ltd | Chemical treater for semiconductor substrate |
US6497241B1 (en) * | 1999-12-23 | 2002-12-24 | Lam Research Corporation | Hollow core spindle and spin, rinse, and dry module including the same |
JP2003035372A (en) * | 2001-07-23 | 2003-02-07 | Nok Corp | Sealing device |
WO2003080898A1 (en) * | 2002-03-25 | 2003-10-02 | Ebara Corporation | Electrochemical machine and electrochemical machining method |
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