JPS57153431A - Electroplating method for semiconductor wafer - Google Patents

Electroplating method for semiconductor wafer

Info

Publication number
JPS57153431A
JPS57153431A JP4137881A JP4137881A JPS57153431A JP S57153431 A JPS57153431 A JP S57153431A JP 4137881 A JP4137881 A JP 4137881A JP 4137881 A JP4137881 A JP 4137881A JP S57153431 A JPS57153431 A JP S57153431A
Authority
JP
Japan
Prior art keywords
wafer
plate
plating
wax
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4137881A
Other languages
Japanese (ja)
Inventor
Hirotake Nagai
Makoto Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4137881A priority Critical patent/JPS57153431A/en
Publication of JPS57153431A publication Critical patent/JPS57153431A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Abstract

PURPOSE:To decrease the quantity of wax used by a method wherein two conductive patterns along the shape of the wafer are formed the one surface of a wafer pasted plate consisting of an insulating plate, the surface not plated of the wafer is pasted onto the patterns by using wax, only the plating surface of the wafer is immersed in a plating liquid, and the plating surface is plated. CONSTITUTION:The conductive patterns 7 mutually separated are formed onto one surface of the insulating plate 6 in left and right symmetrical shapes while being conformed to the shape of the silicon wafer 1, and the wafer 1 is pasted onto the patterns by using wax 4 while directing the plating surface 2 of the wafer 1 to the surface. The wafer pasted plate 8 manufactured in this manner is placed on a plating jig plate 9, the plate 8 is held down by an electrode hold- down plate 10 projected from an electrode plate 12 for a jig shaped at the end section of the jig plate 9, only the plating surface of the surface 2 of the wafer 1 is immersed in the plating liquid, currents are flowed through the patterns 7 while supporting the plate 8 by a handle 11 connected to the conductive patterns 7, and the surface 2 is plated equally. Accordingly, the quantity of the wax 4 used may be decreased, and working hours are also shortened.
JP4137881A 1981-03-17 1981-03-17 Electroplating method for semiconductor wafer Pending JPS57153431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4137881A JPS57153431A (en) 1981-03-17 1981-03-17 Electroplating method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4137881A JPS57153431A (en) 1981-03-17 1981-03-17 Electroplating method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS57153431A true JPS57153431A (en) 1982-09-22

Family

ID=12606736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4137881A Pending JPS57153431A (en) 1981-03-17 1981-03-17 Electroplating method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS57153431A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000007229A1 (en) * 1998-07-24 2000-02-10 Interuniversitair Micro-Elektronica Centrum A system and a method for plating of a conductive pattern
GB2367255B (en) * 2000-09-04 2003-03-12 Aerolatte Ltd Electric whisk
US6758958B1 (en) 1998-07-24 2004-07-06 Interuniversitair Micro-Elektronica Centrum System and a method for plating of a conductive pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000007229A1 (en) * 1998-07-24 2000-02-10 Interuniversitair Micro-Elektronica Centrum A system and a method for plating of a conductive pattern
US6758958B1 (en) 1998-07-24 2004-07-06 Interuniversitair Micro-Elektronica Centrum System and a method for plating of a conductive pattern
GB2367255B (en) * 2000-09-04 2003-03-12 Aerolatte Ltd Electric whisk

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