JPS5739574A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5739574A
JPS5739574A JP55115391A JP11539180A JPS5739574A JP S5739574 A JPS5739574 A JP S5739574A JP 55115391 A JP55115391 A JP 55115391A JP 11539180 A JP11539180 A JP 11539180A JP S5739574 A JPS5739574 A JP S5739574A
Authority
JP
Japan
Prior art keywords
region
electrode
thyristor
cathode electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55115391A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6155260B2 (OSRAM
Inventor
Yoichi Araki
Toshio Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55115391A priority Critical patent/JPS5739574A/ja
Priority to DE8181106493T priority patent/DE3173128D1/de
Priority to EP81106493A priority patent/EP0046578B1/en
Priority to US06/294,750 priority patent/US4445133A/en
Priority to CA000384419A priority patent/CA1154173A/en
Publication of JPS5739574A publication Critical patent/JPS5739574A/ja
Publication of JPS6155260B2 publication Critical patent/JPS6155260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Thyristors (AREA)
JP55115391A 1980-08-22 1980-08-22 Semiconductor device Granted JPS5739574A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55115391A JPS5739574A (en) 1980-08-22 1980-08-22 Semiconductor device
DE8181106493T DE3173128D1 (en) 1980-08-22 1981-08-20 Power thyristor
EP81106493A EP0046578B1 (en) 1980-08-22 1981-08-20 Power thyristor
US06/294,750 US4445133A (en) 1980-08-22 1981-08-20 Semiconductor device
CA000384419A CA1154173A (en) 1980-08-22 1981-08-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55115391A JPS5739574A (en) 1980-08-22 1980-08-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5739574A true JPS5739574A (en) 1982-03-04
JPS6155260B2 JPS6155260B2 (OSRAM) 1986-11-27

Family

ID=14661380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55115391A Granted JPS5739574A (en) 1980-08-22 1980-08-22 Semiconductor device

Country Status (5)

Country Link
US (1) US4445133A (OSRAM)
EP (1) EP0046578B1 (OSRAM)
JP (1) JPS5739574A (OSRAM)
CA (1) CA1154173A (OSRAM)
DE (1) DE3173128D1 (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2132327B (en) * 1982-12-14 1986-03-26 Apv Co Ltd Heat transfer apparatus
IT1212799B (it) * 1983-12-15 1989-11-30 Ates Componenti Elettron Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
US5592118A (en) * 1994-03-09 1997-01-07 Cooper Industries, Inc. Ignition exciter circuit with thyristors having high di/dt and high voltage blockage
US5656966A (en) * 1994-03-09 1997-08-12 Cooper Industries, Inc. Turbine engine ignition exciter circuit including low voltage lockout control
US5981982A (en) * 1994-03-09 1999-11-09 Driscoll; John Cuervo Dual gated power electronic switching devices
US5970324A (en) * 1994-03-09 1999-10-19 Driscoll; John Cuervo Methods of making dual gated power electronic switching devices
US7355300B2 (en) 2004-06-15 2008-04-08 Woodward Governor Company Solid state turbine engine ignition exciter having elevated temperature operational capability
JP2011151063A (ja) * 2010-01-19 2011-08-04 Sansha Electric Mfg Co Ltd サイリスタ
JP5777761B2 (ja) * 2014-03-19 2015-09-09 株式会社三社電機製作所 サイリスタ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021347A (OSRAM) * 1973-06-27 1975-03-06
JPS5021346A (OSRAM) * 1973-05-31 1975-03-06

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980832A (en) * 1959-06-10 1961-04-18 Westinghouse Electric Corp High current npnp switch
NL6408263A (OSRAM) * 1964-07-18 1966-01-19
US3486088A (en) * 1968-05-22 1969-12-23 Nat Electronics Inc Regenerative gate thyristor construction
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3622845A (en) * 1969-05-01 1971-11-23 Gen Electric Scr with amplified emitter gate
JPS541437B2 (OSRAM) * 1973-04-18 1979-01-24
US4086612A (en) * 1973-06-12 1978-04-25 Siemens Aktiengesellschaft Thyristor
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
JPS53110483A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Thyristor
JPS5942991B2 (ja) * 1977-05-23 1984-10-18 株式会社日立製作所 サイリスタ
JPS584827B2 (ja) * 1977-07-20 1983-01-27 株式会社日立製作所 サイリスタ
JPS5939909B2 (ja) * 1978-03-31 1984-09-27 株式会社東芝 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5021346A (OSRAM) * 1973-05-31 1975-03-06
JPS5021347A (OSRAM) * 1973-06-27 1975-03-06

Also Published As

Publication number Publication date
JPS6155260B2 (OSRAM) 1986-11-27
CA1154173A (en) 1983-09-20
US4445133A (en) 1984-04-24
DE3173128D1 (en) 1986-01-16
EP0046578A2 (en) 1982-03-03
EP0046578A3 (en) 1983-06-22
EP0046578B1 (en) 1985-12-04

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