JPS5737881A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5737881A JPS5737881A JP11343480A JP11343480A JPS5737881A JP S5737881 A JPS5737881 A JP S5737881A JP 11343480 A JP11343480 A JP 11343480A JP 11343480 A JP11343480 A JP 11343480A JP S5737881 A JPS5737881 A JP S5737881A
- Authority
- JP
- Japan
- Prior art keywords
- amount
- substrate
- contained
- interface
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 239000007788 liquid Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11343480A JPS5737881A (en) | 1980-08-20 | 1980-08-20 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11343480A JPS5737881A (en) | 1980-08-20 | 1980-08-20 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5737881A true JPS5737881A (en) | 1982-03-02 |
Family
ID=14612117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11343480A Pending JPS5737881A (en) | 1980-08-20 | 1980-08-20 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5737881A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61114755A (ja) * | 1984-11-09 | 1986-06-02 | 株式会社御池鐵工所 | 圧縮加熱微砕機 |
-
1980
- 1980-08-20 JP JP11343480A patent/JPS5737881A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61114755A (ja) * | 1984-11-09 | 1986-06-02 | 株式会社御池鐵工所 | 圧縮加熱微砕機 |
| JPH0148821B2 (ja) * | 1984-11-09 | 1989-10-20 | Miike Tetsukosho Kk |
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