JPS5737869A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5737869A
JPS5737869A JP11416880A JP11416880A JPS5737869A JP S5737869 A JPS5737869 A JP S5737869A JP 11416880 A JP11416880 A JP 11416880A JP 11416880 A JP11416880 A JP 11416880A JP S5737869 A JPS5737869 A JP S5737869A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
type
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11416880A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0243346B2 (enrdf_load_stackoverflow
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11416880A priority Critical patent/JPS5737869A/ja
Publication of JPS5737869A publication Critical patent/JPS5737869A/ja
Publication of JPH0243346B2 publication Critical patent/JPH0243346B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP11416880A 1980-08-20 1980-08-20 Semiconductor integrated circuit device Granted JPS5737869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11416880A JPS5737869A (en) 1980-08-20 1980-08-20 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11416880A JPS5737869A (en) 1980-08-20 1980-08-20 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5737869A true JPS5737869A (en) 1982-03-02
JPH0243346B2 JPH0243346B2 (enrdf_load_stackoverflow) 1990-09-28

Family

ID=14630867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11416880A Granted JPS5737869A (en) 1980-08-20 1980-08-20 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5737869A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185684A (en) * 1975-01-27 1976-07-27 Nippon Telegraph & Telephone Shusekikafukugososhi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185684A (en) * 1975-01-27 1976-07-27 Nippon Telegraph & Telephone Shusekikafukugososhi

Also Published As

Publication number Publication date
JPH0243346B2 (enrdf_load_stackoverflow) 1990-09-28

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