JPS57164558A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57164558A
JPS57164558A JP56049920A JP4992081A JPS57164558A JP S57164558 A JPS57164558 A JP S57164558A JP 56049920 A JP56049920 A JP 56049920A JP 4992081 A JP4992081 A JP 4992081A JP S57164558 A JPS57164558 A JP S57164558A
Authority
JP
Japan
Prior art keywords
integrated circuit
inverter gate
linear element
insulators
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56049920A
Other languages
Japanese (ja)
Inventor
Ryusuke Iwamoto
Tadashi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56049920A priority Critical patent/JPS57164558A/en
Publication of JPS57164558A publication Critical patent/JPS57164558A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve dielectric strength and operation speed by a method wherein insulators are provided around a linear element and an inverter gate of I<2>L when a linear integrated circuit and an I<2>L integrated circuit coexist on one semiconductor chip. CONSTITUTION:Insulators 421 and 422 are formed surrounding a base region 28 of a linear element (NPN transistor) 26 and a region for an I<2>L inverter gate 27. Moreover, an insulator 423 is formed surrounding an N<+> diffusion layer 30 which is provided for reducing series resistance of the emitter of the I<2>L inverter gate 27. Each insulator can be formed by oxidation process after grooves are formed in the semiconductor layer. With this constitution, because of the existance of the oxide films 422 and 423, useless current is reduced and parasitic capacity is suppressed and, by the oxide film 421, dielectric strength of the linear element is improved.
JP56049920A 1981-04-02 1981-04-02 Semiconductor integrated circuit device Pending JPS57164558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56049920A JPS57164558A (en) 1981-04-02 1981-04-02 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56049920A JPS57164558A (en) 1981-04-02 1981-04-02 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57164558A true JPS57164558A (en) 1982-10-09

Family

ID=12844443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56049920A Pending JPS57164558A (en) 1981-04-02 1981-04-02 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57164558A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0521219A2 (en) * 1991-07-01 1993-01-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for its fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0521219A2 (en) * 1991-07-01 1993-01-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for its fabrication

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