JPS5735326A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5735326A
JPS5735326A JP11052480A JP11052480A JPS5735326A JP S5735326 A JPS5735326 A JP S5735326A JP 11052480 A JP11052480 A JP 11052480A JP 11052480 A JP11052480 A JP 11052480A JP S5735326 A JPS5735326 A JP S5735326A
Authority
JP
Japan
Prior art keywords
lead
semiconductor substrate
silicon dioxide
leakage current
containing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11052480A
Other languages
Japanese (ja)
Inventor
Yoshihiko Watari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11052480A priority Critical patent/JPS5735326A/en
Publication of JPS5735326A publication Critical patent/JPS5735326A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To minimize leakage current, by executing etching or plasma oxidizing on the uppermost layer of a lead-containing silicon dioxide film attached onto a semiconductor substrate. CONSTITUTION:The uppermost surface layer of a lead-containing silicon dioxide film formed on a semiconductor substrate is etched or oxidized by oxygen plasma. It is possible, by doing so, to remarkably reduce leakage current caused by insufficient oxidation of lead.
JP11052480A 1980-08-12 1980-08-12 Manufacture of semiconductor device Pending JPS5735326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11052480A JPS5735326A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11052480A JPS5735326A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5735326A true JPS5735326A (en) 1982-02-25

Family

ID=14537978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11052480A Pending JPS5735326A (en) 1980-08-12 1980-08-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735326A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58167102A (en) * 1982-03-29 1983-10-03 株式会社名南製作所 Flitch
JPH03190133A (en) * 1989-12-19 1991-08-20 Matsushita Electron Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58167102A (en) * 1982-03-29 1983-10-03 株式会社名南製作所 Flitch
JPH0342165B2 (en) * 1982-03-29 1991-06-26
JPH03190133A (en) * 1989-12-19 1991-08-20 Matsushita Electron Corp Manufacture of semiconductor device

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