JPS5733491A - Read-only semiconductor storage device - Google Patents

Read-only semiconductor storage device

Info

Publication number
JPS5733491A
JPS5733491A JP10569280A JP10569280A JPS5733491A JP S5733491 A JPS5733491 A JP S5733491A JP 10569280 A JP10569280 A JP 10569280A JP 10569280 A JP10569280 A JP 10569280A JP S5733491 A JPS5733491 A JP S5733491A
Authority
JP
Japan
Prior art keywords
electrode
region
read
semiconductor region
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10569280A
Other languages
Japanese (ja)
Other versions
JPS6314436B2 (en
Inventor
Shigenobu Sakai
Shigeto Koda
Yoshitaka Kitano
Hideo Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10569280A priority Critical patent/JPS5733491A/en
Publication of JPS5733491A publication Critical patent/JPS5733491A/en
Publication of JPS6314436B2 publication Critical patent/JPS6314436B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To realize the simple reading of the digital information in a high speed, by precharging a semiconductor region and reducing both the charging time and the discharging time. CONSTITUTION:A precharge control electrode K is provided between a semiconductor region 4 and an electrode Wn on the main surface 2 of a semiconductor substrate 1 via an insulated layer 5 and in such way that the electrode K overlaps partially the electrode Wn. Then the voltage is applied from outside to the electrode K, and thus the region under electrodes W1-Wn can be precharged on the surface 2. Accordingly the amount of electron that is injected to the side of the region 4 from a semiconductor region 3 can be reduced in case the voltage of the region 4 has variation. This reduces both the charging and discharging time.
JP10569280A 1980-07-31 1980-07-31 Read-only semiconductor storage device Granted JPS5733491A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10569280A JPS5733491A (en) 1980-07-31 1980-07-31 Read-only semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10569280A JPS5733491A (en) 1980-07-31 1980-07-31 Read-only semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5733491A true JPS5733491A (en) 1982-02-23
JPS6314436B2 JPS6314436B2 (en) 1988-03-30

Family

ID=14414442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10569280A Granted JPS5733491A (en) 1980-07-31 1980-07-31 Read-only semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5733491A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376717A (en) * 1976-12-20 1978-07-07 Hitachi Ltd Semionductor read only memory
JPS54101231A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Dynmic type rom
JPS5593593A (en) * 1978-12-29 1980-07-16 Ibm Semiconductor memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376717A (en) * 1976-12-20 1978-07-07 Hitachi Ltd Semionductor read only memory
JPS54101231A (en) * 1978-01-27 1979-08-09 Hitachi Ltd Dynmic type rom
JPS5593593A (en) * 1978-12-29 1980-07-16 Ibm Semiconductor memory

Also Published As

Publication number Publication date
JPS6314436B2 (en) 1988-03-30

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