JPS5376717A - Semionductor read only memory - Google Patents

Semionductor read only memory

Info

Publication number
JPS5376717A
JPS5376717A JP15198176A JP15198176A JPS5376717A JP S5376717 A JPS5376717 A JP S5376717A JP 15198176 A JP15198176 A JP 15198176A JP 15198176 A JP15198176 A JP 15198176A JP S5376717 A JPS5376717 A JP S5376717A
Authority
JP
Japan
Prior art keywords
semionductor
read
memory
fet
malfunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15198176A
Other languages
Japanese (ja)
Inventor
Akira Takanashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15198176A priority Critical patent/JPS5376717A/en
Publication of JPS5376717A publication Critical patent/JPS5376717A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To obtain the high-speed operation and to prevent the malfunction from occurring by providing pre-charging FET between at least one connection point of the switching FET applied with an input signal and a power voltage terminal.
JP15198176A 1976-12-20 1976-12-20 Semionductor read only memory Pending JPS5376717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15198176A JPS5376717A (en) 1976-12-20 1976-12-20 Semionductor read only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15198176A JPS5376717A (en) 1976-12-20 1976-12-20 Semionductor read only memory

Publications (1)

Publication Number Publication Date
JPS5376717A true JPS5376717A (en) 1978-07-07

Family

ID=15530441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15198176A Pending JPS5376717A (en) 1976-12-20 1976-12-20 Semionductor read only memory

Country Status (1)

Country Link
JP (1) JPS5376717A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5733491A (en) * 1980-07-31 1982-02-23 Nippon Telegr & Teleph Corp <Ntt> Read-only semiconductor storage device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5733491A (en) * 1980-07-31 1982-02-23 Nippon Telegr & Teleph Corp <Ntt> Read-only semiconductor storage device
JPS6314436B2 (en) * 1980-07-31 1988-03-30 Nippon Telegraph & Telephone

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