JPS5376717A - Semionductor read only memory - Google Patents
Semionductor read only memoryInfo
- Publication number
- JPS5376717A JPS5376717A JP15198176A JP15198176A JPS5376717A JP S5376717 A JPS5376717 A JP S5376717A JP 15198176 A JP15198176 A JP 15198176A JP 15198176 A JP15198176 A JP 15198176A JP S5376717 A JPS5376717 A JP S5376717A
- Authority
- JP
- Japan
- Prior art keywords
- semionductor
- read
- memory
- fet
- malfunction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007257 malfunction Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain the high-speed operation and to prevent the malfunction from occurring by providing pre-charging FET between at least one connection point of the switching FET applied with an input signal and a power voltage terminal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15198176A JPS5376717A (en) | 1976-12-20 | 1976-12-20 | Semionductor read only memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15198176A JPS5376717A (en) | 1976-12-20 | 1976-12-20 | Semionductor read only memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5376717A true JPS5376717A (en) | 1978-07-07 |
Family
ID=15530441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15198176A Pending JPS5376717A (en) | 1976-12-20 | 1976-12-20 | Semionductor read only memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5376717A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5733491A (en) * | 1980-07-31 | 1982-02-23 | Nippon Telegr & Teleph Corp <Ntt> | Read-only semiconductor storage device |
-
1976
- 1976-12-20 JP JP15198176A patent/JPS5376717A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5733491A (en) * | 1980-07-31 | 1982-02-23 | Nippon Telegr & Teleph Corp <Ntt> | Read-only semiconductor storage device |
JPS6314436B2 (en) * | 1980-07-31 | 1988-03-30 | Nippon Telegraph & Telephone |
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