JPS5696870A - Structure of mnos memory cell - Google Patents
Structure of mnos memory cellInfo
- Publication number
- JPS5696870A JPS5696870A JP17302479A JP17302479A JPS5696870A JP S5696870 A JPS5696870 A JP S5696870A JP 17302479 A JP17302479 A JP 17302479A JP 17302479 A JP17302479 A JP 17302479A JP S5696870 A JPS5696870 A JP S5696870A
- Authority
- JP
- Japan
- Prior art keywords
- film
- si3n4
- thin
- charge
- lowered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To increase the reading number in the MNOS memory cell by using an SiO2 layer and an Si3N4 layer films, maintaining the thickness of the Si3N4 film less than 500Angstrom , thereby enabling reading of a voltage of 1.5V and improving the ''0'' state holding characteristics thereof. CONSTITUTION:The second layer insulating film Si3N4 3 relates to the amplitude of the wiring voltage and the depth of a trap level. When the thin 3 becomes thin in case that the SiO2 film 2 is uniformly thick, the writing voltage is lowered, but the widths of the ''1'' and ''0'' are reduced, the depth of the grap is reduced, and the collected charge can be readily erased. The thickness of the Si3N4 film is set less than 500Angstrom , the threshold value is lowered in production by utilizing the effect by the thin film, and the charge disposed at the stable trap level in production is used without using the state that the charge is injected to the trap. Since the injection charge is not erased from the shallow trap level in this manner, the memory holding capacity can be remarkably improved, and since the thin Si3N4 film is used, the wiring voltage can be lowered, and it can be readily read even for 1.5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17302479A JPS5696870A (en) | 1979-12-28 | 1979-12-28 | Structure of mnos memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17302479A JPS5696870A (en) | 1979-12-28 | 1979-12-28 | Structure of mnos memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5696870A true JPS5696870A (en) | 1981-08-05 |
Family
ID=15952787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17302479A Pending JPS5696870A (en) | 1979-12-28 | 1979-12-28 | Structure of mnos memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5696870A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10781821B2 (en) | 2016-07-19 | 2020-09-22 | Lg Innotek Co., Ltd. | Fan motor and vehicle comprising same |
| US10782151B2 (en) | 2016-07-19 | 2020-09-22 | Lg Innotek Co., Ltd. | Sensor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4852383A (en) * | 1971-11-01 | 1973-07-23 |
-
1979
- 1979-12-28 JP JP17302479A patent/JPS5696870A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4852383A (en) * | 1971-11-01 | 1973-07-23 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10781821B2 (en) | 2016-07-19 | 2020-09-22 | Lg Innotek Co., Ltd. | Fan motor and vehicle comprising same |
| US10782151B2 (en) | 2016-07-19 | 2020-09-22 | Lg Innotek Co., Ltd. | Sensor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES8204209A1 (en) | FET cell usable in storage or switching devices. | |
| EP0135036A3 (en) | Semiconductor memory | |
| US4068217A (en) | Ultimate density non-volatile cross-point semiconductor memory array | |
| US3590337A (en) | Plural dielectric layered electrically alterable non-destructive readout memory element | |
| JPS5743470A (en) | Semiconductor device | |
| JPS5696870A (en) | Structure of mnos memory cell | |
| JPS5538624A (en) | Nonvolatile semiconductor memory device | |
| JPS6322626B2 (en) | ||
| JPS54118782A (en) | Nonvolatile conductor memory unit | |
| JPS55141750A (en) | Insulated gate type semiconductor device | |
| JPS55111173A (en) | Semiconductor memory device | |
| JPS5510543A (en) | Measuring method for memory integrated circuit | |
| JPS51138347A (en) | Semiconductor memory device | |
| JPS5593591A (en) | Driving system of semiconductor memory device | |
| JPS55153140A (en) | Semiconductor recording and reproducing system | |
| JPS57104263A (en) | Semiconductor memory storage | |
| MOELLER | Information storage in MNOS structures(Data storage in metal-nitride-oxide-silicon structures, noting nondestructive readout feature) | |
| JPS5292441A (en) | Semiconductor memory unit | |
| JPS62123773A (en) | Semiconductor memory device | |
| JPS54154284A (en) | Integrated nonvolatile memory unit | |
| JPS5691A (en) | Memory sense amplifier | |
| Moeller | Information Storage in Mnos Structures. Informationsspeicherung in Mnos-Strukturen | |
| JPS5469037A (en) | Data erasing method for nonvolatile semiconductor memory element | |
| JPS5784179A (en) | Semiconductor memory device | |
| JPS5720992A (en) | Storage device |