JPS5691A - Memory sense amplifier - Google Patents

Memory sense amplifier

Info

Publication number
JPS5691A
JPS5691A JP7587379A JP7587379A JPS5691A JP S5691 A JPS5691 A JP S5691A JP 7587379 A JP7587379 A JP 7587379A JP 7587379 A JP7587379 A JP 7587379A JP S5691 A JPS5691 A JP S5691A
Authority
JP
Japan
Prior art keywords
node
charge storage
mostrq7
memory cell
storage section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7587379A
Other languages
Japanese (ja)
Inventor
Yoshiharu Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7587379A priority Critical patent/JPS5691A/en
Publication of JPS5691A publication Critical patent/JPS5691A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Abstract

PURPOSE:To detect the state of potential stored in the charge storage section of memory cell, by detecting the potential change caused at the first node when a given amount of charge is taken off from the charge storage sections of the memory cell and dummy cell via the first node. CONSTITUTION:The voltage between the third nide 9 consisting of the gate of MOSTRQ7 for sense amplifier and the second node 3 consisting of the source is the threshold voltage to turn on MOSTRQ1 of the memory cell 1 selected from the state of interruption of TRQ7, and MOSTRQ7 is conudctive by causing small potential change to the second node 3 through the conduction of the charge storage section 10 and the second node 3, and until MOSTRQ7 is again cut off, the charge storage section 10 of the memory cell 1 and the charge storage section 11 of the dummy cell 4 take out a given amount of charge from the first node 8 consisting of the drain of MOSTRQ7. In this case, the potential change caused in the node 8 is detected, allowing to take greater potential amplitude of stored data and to increase the difference of detected voltages.
JP7587379A 1979-06-15 1979-06-15 Memory sense amplifier Pending JPS5691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7587379A JPS5691A (en) 1979-06-15 1979-06-15 Memory sense amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7587379A JPS5691A (en) 1979-06-15 1979-06-15 Memory sense amplifier

Publications (1)

Publication Number Publication Date
JPS5691A true JPS5691A (en) 1981-01-06

Family

ID=13588817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7587379A Pending JPS5691A (en) 1979-06-15 1979-06-15 Memory sense amplifier

Country Status (1)

Country Link
JP (1) JPS5691A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500343A (en) * 1982-09-30 1985-02-19 Eli Lilly And Company Oxazolyl and thiazolyl amides as herbicides
JPS6130689A (en) * 1984-07-23 1986-02-12 Matsushita Electric Ind Co Ltd Electrolytically polymerizing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500343A (en) * 1982-09-30 1985-02-19 Eli Lilly And Company Oxazolyl and thiazolyl amides as herbicides
JPS6130689A (en) * 1984-07-23 1986-02-12 Matsushita Electric Ind Co Ltd Electrolytically polymerizing method

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