JPS55160393A - Read voltage setting system for semiconductor memory - Google Patents

Read voltage setting system for semiconductor memory

Info

Publication number
JPS55160393A
JPS55160393A JP6817779A JP6817779A JPS55160393A JP S55160393 A JPS55160393 A JP S55160393A JP 6817779 A JP6817779 A JP 6817779A JP 6817779 A JP6817779 A JP 6817779A JP S55160393 A JPS55160393 A JP S55160393A
Authority
JP
Japan
Prior art keywords
memory
semiconductor memory
read
read voltage
monitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6817779A
Other languages
Japanese (ja)
Other versions
JPS6129075B2 (en
Inventor
Teruzo Sasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP6817779A priority Critical patent/JPS55160393A/en
Publication of JPS55160393A publication Critical patent/JPS55160393A/en
Publication of JPS6129075B2 publication Critical patent/JPS6129075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

Abstract

PURPOSE:To make an accurate read possible at any time by equipping an insulating-gate type nonvolatile semiconductor memory with a monitor memory of the same type and the same characteristics. CONSTITUTION:On the substrate of an insulating-gate type nonvolatile semiconductor memory, monitor memory M of the same type and the samd characteristics is formed. Then, once ''0'' and ''1'' are written in the memory, alternation switches S1 and S2 are connected to their 2nd and 3rd contacts to write ''0'' and ''1'' in memory M at the same time. Therefore, when the threshold voltage of the memory changes, the threshold voltage of memory M changes similarly in response to the change. With the memory placed in read mode in the state, read voltage VR' is supplied from the drain of monitor M to the memory via alternation switches. Thus, the read voltage also changes in response to the change in the threshold voltage of the memory, so that an invariably-accurate area can be carried out.
JP6817779A 1979-05-31 1979-05-31 Read voltage setting system for semiconductor memory Granted JPS55160393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6817779A JPS55160393A (en) 1979-05-31 1979-05-31 Read voltage setting system for semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6817779A JPS55160393A (en) 1979-05-31 1979-05-31 Read voltage setting system for semiconductor memory

Publications (2)

Publication Number Publication Date
JPS55160393A true JPS55160393A (en) 1980-12-13
JPS6129075B2 JPS6129075B2 (en) 1986-07-04

Family

ID=13366223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6817779A Granted JPS55160393A (en) 1979-05-31 1979-05-31 Read voltage setting system for semiconductor memory

Country Status (1)

Country Link
JP (1) JPS55160393A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936393A (en) * 1982-08-20 1984-02-28 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JPS6435798A (en) * 1987-07-30 1989-02-06 Nec Corp Non-volatile semiconductor storage device
JP2007525778A (en) * 2003-06-27 2007-09-06 フリースケール セミコンダクター インコーポレイテッド Variable gate bias for reference transistors in non-volatile memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936393A (en) * 1982-08-20 1984-02-28 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JPS6435798A (en) * 1987-07-30 1989-02-06 Nec Corp Non-volatile semiconductor storage device
JP2007525778A (en) * 2003-06-27 2007-09-06 フリースケール セミコンダクター インコーポレイテッド Variable gate bias for reference transistors in non-volatile memory
JP4842126B2 (en) * 2003-06-27 2011-12-21 フリースケール セミコンダクター インコーポレイテッド Variable gate bias for reference transistors in non-volatile memory

Also Published As

Publication number Publication date
JPS6129075B2 (en) 1986-07-04

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