JPS573298A - Memory integrated circuit - Google Patents

Memory integrated circuit

Info

Publication number
JPS573298A
JPS573298A JP7644180A JP7644180A JPS573298A JP S573298 A JPS573298 A JP S573298A JP 7644180 A JP7644180 A JP 7644180A JP 7644180 A JP7644180 A JP 7644180A JP S573298 A JPS573298 A JP S573298A
Authority
JP
Japan
Prior art keywords
blocks
circuit
memory cell
accessed
selecting circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7644180A
Other languages
English (en)
Inventor
Isao Ueki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7644180A priority Critical patent/JPS573298A/ja
Publication of JPS573298A publication Critical patent/JPS573298A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing

Landscapes

  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP7644180A 1980-06-06 1980-06-06 Memory integrated circuit Pending JPS573298A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7644180A JPS573298A (en) 1980-06-06 1980-06-06 Memory integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7644180A JPS573298A (en) 1980-06-06 1980-06-06 Memory integrated circuit

Publications (1)

Publication Number Publication Date
JPS573298A true JPS573298A (en) 1982-01-08

Family

ID=13605232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7644180A Pending JPS573298A (en) 1980-06-06 1980-06-06 Memory integrated circuit

Country Status (1)

Country Link
JP (1) JPS573298A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184930U (ja) * 1982-06-02 1983-12-08 三洋電機株式会社 トランジスタ・スイツチング回路
JPS59175095A (ja) * 1983-03-22 1984-10-03 Mitsubishi Electric Corp 半導体メモリ
JPS6015899A (ja) * 1983-07-08 1985-01-26 Hitachi Micro Comput Eng Ltd 記憶装置
JPS60115099A (ja) * 1983-11-25 1985-06-21 Fujitsu Ltd 半導体記憶装置
EP0186051A2 (de) * 1984-12-28 1986-07-02 Siemens Aktiengesellschaft Integrierter Halbleiterspeicher
JPS61158099A (ja) * 1984-12-28 1986-07-17 シーメンス、アクチエンゲゼルシヤフト 集積半導体メモリ
EP0193210A2 (en) * 1985-02-28 1986-09-03 Nec Corporation Semiconductor memory device with a built-in test circuit
JPH02180000A (ja) * 1988-12-31 1990-07-12 Samsung Electron Co Ltd 高密度メモリのテスト用並列リード回路

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184930U (ja) * 1982-06-02 1983-12-08 三洋電機株式会社 トランジスタ・スイツチング回路
JPH0224277Y2 (ja) * 1982-06-02 1990-07-03
JPS59175095A (ja) * 1983-03-22 1984-10-03 Mitsubishi Electric Corp 半導体メモリ
JPS6015899A (ja) * 1983-07-08 1985-01-26 Hitachi Micro Comput Eng Ltd 記憶装置
JPS60115099A (ja) * 1983-11-25 1985-06-21 Fujitsu Ltd 半導体記憶装置
JPH0463480B2 (ja) * 1983-11-25 1992-10-09 Fujitsu Ltd
EP0186051A2 (de) * 1984-12-28 1986-07-02 Siemens Aktiengesellschaft Integrierter Halbleiterspeicher
JPS61158100A (ja) * 1984-12-28 1986-07-17 シーメンス、アクチエンゲゼルシヤフト 集積半導体メモリ
JPS61158099A (ja) * 1984-12-28 1986-07-17 シーメンス、アクチエンゲゼルシヤフト 集積半導体メモリ
EP0193210A2 (en) * 1985-02-28 1986-09-03 Nec Corporation Semiconductor memory device with a built-in test circuit
JPS621200A (ja) * 1985-02-28 1987-01-07 Nec Corp 半導体メモリ
JPH02180000A (ja) * 1988-12-31 1990-07-12 Samsung Electron Co Ltd 高密度メモリのテスト用並列リード回路

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