JPS5732683A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5732683A
JPS5732683A JP10849180A JP10849180A JPS5732683A JP S5732683 A JPS5732683 A JP S5732683A JP 10849180 A JP10849180 A JP 10849180A JP 10849180 A JP10849180 A JP 10849180A JP S5732683 A JPS5732683 A JP S5732683A
Authority
JP
Japan
Prior art keywords
detector
film
type
nonrectifying
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10849180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6320384B2 (enrdf_load_stackoverflow
Inventor
Kunihiro Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10849180A priority Critical patent/JPS5732683A/ja
Publication of JPS5732683A publication Critical patent/JPS5732683A/ja
Publication of JPS6320384B2 publication Critical patent/JPS6320384B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP10849180A 1980-08-06 1980-08-06 Semiconductor device Granted JPS5732683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10849180A JPS5732683A (en) 1980-08-06 1980-08-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10849180A JPS5732683A (en) 1980-08-06 1980-08-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5732683A true JPS5732683A (en) 1982-02-22
JPS6320384B2 JPS6320384B2 (enrdf_load_stackoverflow) 1988-04-27

Family

ID=14486111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10849180A Granted JPS5732683A (en) 1980-08-06 1980-08-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5732683A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147568A (ja) * 1984-12-21 1986-07-05 Hamamatsu Photonics Kk 赤外線イメ−ジセンサ
US5410168A (en) * 1991-11-06 1995-04-25 Mitsubishi Denki Kabushiki Kaisha Infrared imaging device
JP2013084757A (ja) * 2011-10-10 2013-05-09 Denso Corp 撮像素子
JP2013527597A (ja) * 2010-03-19 2013-06-27 インヴィサージ テクノロジーズ インコーポレイテッド 感光性半導体ダイオードを採用した画像センサ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519591A (enrdf_load_stackoverflow) * 1974-07-13 1976-01-26 Fujitsu Ltd
JPS528788A (en) * 1975-07-10 1977-01-22 Nec Corp Charge transfer exposer
JPS5493958A (en) * 1978-01-06 1979-07-25 Takashi Katouda Method of forming semiconductor hetero junction

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519591A (enrdf_load_stackoverflow) * 1974-07-13 1976-01-26 Fujitsu Ltd
JPS528788A (en) * 1975-07-10 1977-01-22 Nec Corp Charge transfer exposer
JPS5493958A (en) * 1978-01-06 1979-07-25 Takashi Katouda Method of forming semiconductor hetero junction

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147568A (ja) * 1984-12-21 1986-07-05 Hamamatsu Photonics Kk 赤外線イメ−ジセンサ
US5410168A (en) * 1991-11-06 1995-04-25 Mitsubishi Denki Kabushiki Kaisha Infrared imaging device
JP2013527597A (ja) * 2010-03-19 2013-06-27 インヴィサージ テクノロジーズ インコーポレイテッド 感光性半導体ダイオードを採用した画像センサ
US9972653B2 (en) 2010-03-19 2018-05-15 Invisage Technologies, Inc. Image sensors employing sensitized semiconductor diodes
JP2013084757A (ja) * 2011-10-10 2013-05-09 Denso Corp 撮像素子

Also Published As

Publication number Publication date
JPS6320384B2 (enrdf_load_stackoverflow) 1988-04-27

Similar Documents

Publication Publication Date Title
JPS5743438A (en) Semiconductor device and manufacture thereof
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS5563840A (en) Semiconductor integrated device
JPS5732683A (en) Semiconductor device
JPS53112061A (en) Wiring substrate of semiconductor chip
JPS57104279A (en) Photo isolator
JPS5730366A (en) Schottky transistor and manufacture thereof
JPS52129380A (en) Semiconductor device
JPS6461057A (en) Semiconductor device
JPS54117689A (en) Semiconductor device
JPS5736860A (en) Semiconductor device
JPS546775A (en) Semiconductor device featuring stepped electrode structure
JPS5268388A (en) Semiconductor integrated circuit
JPS55151359A (en) Semiconductor device
JPS52141566A (en) Semiconductor device and its manufacture
JPS52144988A (en) Semiconductor light emitting element
JPS52138871A (en) Semiconductor device
JPS5731170A (en) Semiconductor device
JPS52130295A (en) Semiconductor light emitting device
JPS5343484A (en) Semiconductor integrated circuit device
JPS54151377A (en) Semiconductor integrated circuit
JPS5544711A (en) Semiconductor device
JPS538058A (en) Production of semiconductor device
JPS5736876A (en) Semiconductor photodetector
JPS53141575A (en) Semiconductor device