JPS5732628A - Electron beam exposure apparatus - Google Patents

Electron beam exposure apparatus

Info

Publication number
JPS5732628A
JPS5732628A JP10792080A JP10792080A JPS5732628A JP S5732628 A JPS5732628 A JP S5732628A JP 10792080 A JP10792080 A JP 10792080A JP 10792080 A JP10792080 A JP 10792080A JP S5732628 A JPS5732628 A JP S5732628A
Authority
JP
Japan
Prior art keywords
electron beam
command
computer
polarizer
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10792080A
Other languages
Japanese (ja)
Other versions
JPS5916401B2 (en
Inventor
Hidekazu Goto
Takashi Soma
Masanori Idesawa
Kazumitsu Tanaka
Nobuo Goto
Teruaki Okino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
RIKEN Institute of Physical and Chemical Research
Original Assignee
Jeol Ltd
Nihon Denshi KK
RIKEN Institute of Physical and Chemical Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK, RIKEN Institute of Physical and Chemical Research filed Critical Jeol Ltd
Priority to JP10792080A priority Critical patent/JPS5916401B2/en
Publication of JPS5732628A publication Critical patent/JPS5732628A/en
Publication of JPS5916401B2 publication Critical patent/JPS5916401B2/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To enhance the linearity of a rectangular beam image projected on a sample by arranging a plurality of masks having rectangular electron beam passing holes so that the angle can be controlled between two sides constituting a hole in the upper mask. CONSTITUTION:Electron beam from an electron gun 1 irradiates on a mask Mo with a condenser 2 and is polarized with a polarizer 3 which is operated by a command of a computer 11 sent through a D/A converter 12. Then, it is projected in reduction on a sample with a projection lens 4. At this point, a command of the computer controls a position indicating polarizer 5 with a D/A converter 10. A means 6 of detecting the electron beam is provided and a command thereof is sent to the computer 11, which transmits a command to not only the D/A converters 10 and 12 but also a pulse motor 18 thereby controlling the opening angle of the upper mask.
JP10792080A 1980-08-06 1980-08-06 Electron beam exposure equipment Expired JPS5916401B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10792080A JPS5916401B2 (en) 1980-08-06 1980-08-06 Electron beam exposure equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10792080A JPS5916401B2 (en) 1980-08-06 1980-08-06 Electron beam exposure equipment

Publications (2)

Publication Number Publication Date
JPS5732628A true JPS5732628A (en) 1982-02-22
JPS5916401B2 JPS5916401B2 (en) 1984-04-16

Family

ID=14471391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10792080A Expired JPS5916401B2 (en) 1980-08-06 1980-08-06 Electron beam exposure equipment

Country Status (1)

Country Link
JP (1) JPS5916401B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62258782A (en) * 1986-04-30 1987-11-11 Nippon Paint Co Ltd Formation of composite layered film
JP2009054945A (en) * 2007-08-29 2009-03-12 Nuflare Technology Inc Lithographic method by electrically charged particle beams

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62258782A (en) * 1986-04-30 1987-11-11 Nippon Paint Co Ltd Formation of composite layered film
JP2009054945A (en) * 2007-08-29 2009-03-12 Nuflare Technology Inc Lithographic method by electrically charged particle beams

Also Published As

Publication number Publication date
JPS5916401B2 (en) 1984-04-16

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