JPS5731174A - Manufacture of lateral transistor - Google Patents

Manufacture of lateral transistor

Info

Publication number
JPS5731174A
JPS5731174A JP5321581A JP5321581A JPS5731174A JP S5731174 A JPS5731174 A JP S5731174A JP 5321581 A JP5321581 A JP 5321581A JP 5321581 A JP5321581 A JP 5321581A JP S5731174 A JPS5731174 A JP S5731174A
Authority
JP
Japan
Prior art keywords
layer
emitter
hole
providing
concentration gradient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5321581A
Other languages
Japanese (ja)
Inventor
Noboru Horie
Naonobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5321581A priority Critical patent/JPS5731174A/en
Publication of JPS5731174A publication Critical patent/JPS5731174A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To highten hFE and cut-off frequency fT without decreasing dielectric strength, by providing a first hole in a protection film of an N layer, introducing an impurity to form a base layer having a concentration gradient, and providing P type emitter and collector layers through a second hole apart from the first hole. CONSTITUTION:An N epitaxial layer 3 is provided on a P<-> type Si substrate 1 having an N<+> buried layer 2, and separated by a P<+> layer. An N layer is formed by diffusing P or the like from a window of the SiO2 9 emitter part. A horizontal concentration gradient is formed by means of a base layer between an emitter layer 7 and a collector layer 6 so that the emitter side is of higher concentration. A P<+> emitter 7 and a P<+> annular collector 6 are formed simultaneously. An N<+> connecting layer is provided, and an Al electrode 10 is attached. A dotted line 11 shows a boundary between the N epitaxial layer 3 and the high-concentration layer. Providing such a concentration gradient permits a cut-off frequency to be four to five times higher. In addition, no positioning error occurs, and hFE and fT are equalized because the base layer 5 and the emitter layer 7 are formed from the same hole.
JP5321581A 1981-04-10 1981-04-10 Manufacture of lateral transistor Pending JPS5731174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5321581A JPS5731174A (en) 1981-04-10 1981-04-10 Manufacture of lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5321581A JPS5731174A (en) 1981-04-10 1981-04-10 Manufacture of lateral transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP48014706A Division JPS49105485A (en) 1973-02-07 1973-02-07

Publications (1)

Publication Number Publication Date
JPS5731174A true JPS5731174A (en) 1982-02-19

Family

ID=12936603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5321581A Pending JPS5731174A (en) 1981-04-10 1981-04-10 Manufacture of lateral transistor

Country Status (1)

Country Link
JP (1) JPS5731174A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59170937A (en) * 1983-03-18 1984-09-27 Nec Corp Logical operation circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59170937A (en) * 1983-03-18 1984-09-27 Nec Corp Logical operation circuit
JPH0545978B2 (en) * 1983-03-18 1993-07-12 Nippon Electric Co

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