JPS5793563A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5793563A
JPS5793563A JP55169551A JP16955180A JPS5793563A JP S5793563 A JPS5793563 A JP S5793563A JP 55169551 A JP55169551 A JP 55169551A JP 16955180 A JP16955180 A JP 16955180A JP S5793563 A JPS5793563 A JP S5793563A
Authority
JP
Japan
Prior art keywords
type
layer
epitaxial layer
regions
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55169551A
Other languages
Japanese (ja)
Inventor
Mikio Haijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55169551A priority Critical patent/JPS5793563A/en
Publication of JPS5793563A publication Critical patent/JPS5793563A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To effectively perform an isolation by disposing an electrically floated semiconductor layer between isolating regions, thereby effectively preventing the mutual interference between a linear unit and an I<2>L. CONSTITUTION:An N<-> type epitaxial layer 3 grown via an N<+> type buried layer 2 on a P type Si substrate 1 is isolated into a linear side layer 3a and an I<2>L side layer 3b via P<+> type isolating regions 4, 5 adjacent to each other. An epitaxial layer 3 between the regions 4 and 5 is electrically floated. A P-N-P type bipolar lateral transistor is formed on the epitaxial layer 3a of the linear unit 26, and the I<2>L element is formed on the epitaxial layer of the I<2>L unit 27. Thus, the lateral thyristor structure can be eliminated between the elements, thereby effectively preventing the mutual interference between the elements.
JP55169551A 1980-12-03 1980-12-03 Semiconductor device Pending JPS5793563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55169551A JPS5793563A (en) 1980-12-03 1980-12-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55169551A JPS5793563A (en) 1980-12-03 1980-12-03 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5793563A true JPS5793563A (en) 1982-06-10

Family

ID=15888562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55169551A Pending JPS5793563A (en) 1980-12-03 1980-12-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793563A (en)

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