JPS5727031A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS5727031A
JPS5727031A JP10125480A JP10125480A JPS5727031A JP S5727031 A JPS5727031 A JP S5727031A JP 10125480 A JP10125480 A JP 10125480A JP 10125480 A JP10125480 A JP 10125480A JP S5727031 A JPS5727031 A JP S5727031A
Authority
JP
Japan
Prior art keywords
resist pattern
mixed liquid
rinsing
formation
polystylene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10125480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6161532B2 (enrdf_load_stackoverflow
Inventor
Tadamasa Ogawa
Minoru Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10125480A priority Critical patent/JPS5727031A/ja
Publication of JPS5727031A publication Critical patent/JPS5727031A/ja
Publication of JPS6161532B2 publication Critical patent/JPS6161532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP10125480A 1980-07-25 1980-07-25 Formation of resist pattern Granted JPS5727031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10125480A JPS5727031A (en) 1980-07-25 1980-07-25 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10125480A JPS5727031A (en) 1980-07-25 1980-07-25 Formation of resist pattern

Publications (2)

Publication Number Publication Date
JPS5727031A true JPS5727031A (en) 1982-02-13
JPS6161532B2 JPS6161532B2 (enrdf_load_stackoverflow) 1986-12-26

Family

ID=14295770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10125480A Granted JPS5727031A (en) 1980-07-25 1980-07-25 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS5727031A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535054A (en) * 1983-05-05 1985-08-13 Hughes Aircraft Company Wet process for developing styrene polymer resists for submicron lithography

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511311A (en) * 1978-07-10 1980-01-26 Hitachi Ltd Method of photoresist developing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511311A (en) * 1978-07-10 1980-01-26 Hitachi Ltd Method of photoresist developing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535054A (en) * 1983-05-05 1985-08-13 Hughes Aircraft Company Wet process for developing styrene polymer resists for submicron lithography

Also Published As

Publication number Publication date
JPS6161532B2 (enrdf_load_stackoverflow) 1986-12-26

Similar Documents

Publication Publication Date Title
DE3486187D1 (de) Verfahren und vorrichtung zur herstellung von schutzlackbildern.
JPS5727031A (en) Formation of resist pattern
JPS5461931A (en) Forming method of photo resist patterns
JPS57100428A (en) Method for photomechanical process
JPS56137632A (en) Pattern forming
JPS57109331A (en) Formation of resist pattern
JPS5587436A (en) Method of producing semiconductor device
JPS56153736A (en) Manufacture of semiconductor device
JPS56107241A (en) Dry etching method
JPS5541728A (en) Pattern formation by thick film paste
JPS558013A (en) Semiconductor device manufacturing method
JPS55128832A (en) Method of making minute pattern
JPS6424425A (en) Formation of tapered pattern
JPS57173943A (en) Manufacture of photo mask
JPS5740929A (en) Processing method of resist
JPS5656633A (en) Manufacture of semiconductor element
JPS5381083A (en) Focusing method of projection exposure apparatus
JPS5617348A (en) Exposing method
JPS5655943A (en) Pattern forming method
JPS5659236A (en) Photoresist developing method
JPS57153435A (en) Manufacture of semiconductor device
JPS5626440A (en) Method for fine pattern formation
JPS52119179A (en) Electron beam exposing method
JPS6479743A (en) Pattern forming method by dry developing
JPS57208143A (en) Method for forming fine pattern