JPS5725777A - Solid state pickup device - Google Patents

Solid state pickup device

Info

Publication number
JPS5725777A
JPS5725777A JP10161780A JP10161780A JPS5725777A JP S5725777 A JPS5725777 A JP S5725777A JP 10161780 A JP10161780 A JP 10161780A JP 10161780 A JP10161780 A JP 10161780A JP S5725777 A JPS5725777 A JP S5725777A
Authority
JP
Japan
Prior art keywords
region
blooming
channel
substrate
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10161780A
Other languages
Japanese (ja)
Other versions
JPS6050101B2 (en
Inventor
Takahiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55101617A priority Critical patent/JPS6050101B2/en
Priority to US06/285,317 priority patent/US4450464A/en
Publication of JPS5725777A publication Critical patent/JPS5725777A/en
Publication of JPS6050101B2 publication Critical patent/JPS6050101B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Abstract

PURPOSE:To extremely increase the blooming eliminating capacity, by incorporating a vertical structure into the light receiving part of the photodiode part of a pickup element. CONSTITUTION:A vertical n<+>n<->n<+> structure is introudced to a photodiode part isolated by an LOCOS oxide film 501. In this case, a p well 502 enclosing an n<-> region 505 functions as a gate to the channel of the region 505. Accordingly the potential barrier set by a depletion layer 506 caused in the channel of the region 505 is controlled by the applied voltage E' between the well 502 and an n<+> substrate 503. Thus the state of conduction is decided. In case the intensive light that causes the blooming phenomenon with a normal element is amide incident, the overcharge exceeding the maximum amount of stored charge in an n<+> source region 504 is exhausted vertically to an external power source E' through the substrate 503. In such way, the blooming phenomenon can be eliminated.
JP55101617A 1980-07-23 1980-07-23 solid-state imaging device Expired JPS6050101B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55101617A JPS6050101B2 (en) 1980-07-23 1980-07-23 solid-state imaging device
US06/285,317 US4450464A (en) 1980-07-23 1981-07-22 Solid state area imaging apparatus having a charge transfer arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55101617A JPS6050101B2 (en) 1980-07-23 1980-07-23 solid-state imaging device

Publications (2)

Publication Number Publication Date
JPS5725777A true JPS5725777A (en) 1982-02-10
JPS6050101B2 JPS6050101B2 (en) 1985-11-06

Family

ID=14305358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55101617A Expired JPS6050101B2 (en) 1980-07-23 1980-07-23 solid-state imaging device

Country Status (1)

Country Link
JP (1) JPS6050101B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1801878A2 (en) * 2001-11-13 2007-06-27 Kabushiki Kaisha Toshiba Solid-state image sensor using junction gate type field-effect transistor as pixel

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1801878A2 (en) * 2001-11-13 2007-06-27 Kabushiki Kaisha Toshiba Solid-state image sensor using junction gate type field-effect transistor as pixel
EP1801878A3 (en) * 2001-11-13 2007-07-04 Kabushiki Kaisha Toshiba Solid-state image sensor using junction gate type field-effect transistor as pixel
US7508017B2 (en) 2001-11-13 2009-03-24 Kabushiki Kaisha Toshiba Solid-state image sensor using junction gate type field-effect transistor as pixel
US7679667B2 (en) 2001-11-13 2010-03-16 Kabushiki Kaisha Toshiba Solid-state image sensor using junction gate type field-effect transistor as pixel

Also Published As

Publication number Publication date
JPS6050101B2 (en) 1985-11-06

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