JPS55163876A - Charge coupled device and manufacture thereof - Google Patents

Charge coupled device and manufacture thereof

Info

Publication number
JPS55163876A
JPS55163876A JP7201779A JP7201779A JPS55163876A JP S55163876 A JPS55163876 A JP S55163876A JP 7201779 A JP7201779 A JP 7201779A JP 7201779 A JP7201779 A JP 7201779A JP S55163876 A JPS55163876 A JP S55163876A
Authority
JP
Japan
Prior art keywords
channel
region
layer
potential barrier
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7201779A
Other languages
Japanese (ja)
Other versions
JPS6325511B2 (en
Inventor
Hiroo Wakaumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7201779A priority Critical patent/JPS55163876A/en
Publication of JPS55163876A publication Critical patent/JPS55163876A/en
Publication of JPS6325511B2 publication Critical patent/JPS6325511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD

Abstract

PURPOSE:To improve the dynamic range of a charge coupled device by forming a potential barrier region between a channel and a field region to reduce a dark current. CONSTITUTION:A gate electrode 13 is formed through a gate oxide film 12' on a substrate 11, and a potential well 32' is formed in the channel region 15 directly under the electrode 13. A high impurity density layer 50 is formed around an active channel region 15 in contact with an impurity layer 14 and a channel region 15. When the impurity density of the layer 50 is increased higher in distribution than the density of the channel stopping layer 14, a potential barrier 33 is formed. The charge thermally generated in the field region is prevented from flowing into the channel due to the potential barrier, it can prevent the decrease of the dynamic range of the charge due to dark current.
JP7201779A 1979-06-08 1979-06-08 Charge coupled device and manufacture thereof Granted JPS55163876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7201779A JPS55163876A (en) 1979-06-08 1979-06-08 Charge coupled device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7201779A JPS55163876A (en) 1979-06-08 1979-06-08 Charge coupled device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS55163876A true JPS55163876A (en) 1980-12-20
JPS6325511B2 JPS6325511B2 (en) 1988-05-25

Family

ID=13477215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7201779A Granted JPS55163876A (en) 1979-06-08 1979-06-08 Charge coupled device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS55163876A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54102982A (en) * 1978-01-31 1979-08-13 Mitsubishi Electric Corp Charge transfer type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54102982A (en) * 1978-01-31 1979-08-13 Mitsubishi Electric Corp Charge transfer type semiconductor device

Also Published As

Publication number Publication date
JPS6325511B2 (en) 1988-05-25

Similar Documents

Publication Publication Date Title
JPS5754370A (en) Insulating gate type transistor
JPS55133574A (en) Insulated gate field effect transistor
JPS5279679A (en) Semiconductor memory device
IE802615L (en) Thin film transistor
JPS5676574A (en) Schottky injection electrode type semiconductor device
JPS5691473A (en) Semiconductor
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS55163876A (en) Charge coupled device and manufacture thereof
JPS52131478A (en) Semiconductor device
JPS5587481A (en) Mis type semiconductor device
JPS5491074A (en) Semiconductor device
JPS5478671A (en) Semiconductor device
JPS57130469A (en) Mis type semiconductor device
JPS556841A (en) Planar type semiconductor device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS5756971A (en) High speed operation type semiconductor device
JPS5797668A (en) Semiconductor device
JPS5728356A (en) Semiconductor device and manufacture thereof
JPS6417478A (en) Semiconductor storage cell
JPS5353980A (en) Semiconductor device
JPS55133573A (en) Insulated gate field effect transistor
JPS55148422A (en) Manufacturing of semiconductor device
JPS5287990A (en) Semiconductor device
JPS5492180A (en) Manufacture of semiconductor device
JPS54124688A (en) Insulating gate field effect transistor