JPS5721813A - Forming method for film - Google Patents

Forming method for film

Info

Publication number
JPS5721813A
JPS5721813A JP9673280A JP9673280A JPS5721813A JP S5721813 A JPS5721813 A JP S5721813A JP 9673280 A JP9673280 A JP 9673280A JP 9673280 A JP9673280 A JP 9673280A JP S5721813 A JPS5721813 A JP S5721813A
Authority
JP
Japan
Prior art keywords
substrates
reactive gas
electric field
gas
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9673280A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0324053B2 (ko
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP9673280A priority Critical patent/JPS5721813A/ja
Publication of JPS5721813A publication Critical patent/JPS5721813A/ja
Publication of JPH0324053B2 publication Critical patent/JPH0324053B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
JP9673280A 1980-07-15 1980-07-15 Forming method for film Granted JPS5721813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9673280A JPS5721813A (en) 1980-07-15 1980-07-15 Forming method for film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9673280A JPS5721813A (en) 1980-07-15 1980-07-15 Forming method for film

Publications (2)

Publication Number Publication Date
JPS5721813A true JPS5721813A (en) 1982-02-04
JPH0324053B2 JPH0324053B2 (ko) 1991-04-02

Family

ID=14172887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9673280A Granted JPS5721813A (en) 1980-07-15 1980-07-15 Forming method for film

Country Status (1)

Country Link
JP (1) JPS5721813A (ko)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164220A (ja) * 1982-03-24 1983-09-29 Sanyo Electric Co Ltd 非晶質半導体の製造方法
JPS61222280A (ja) * 1985-03-28 1986-10-02 Canon Inc 光起電力素子及びその製造法と製造装置
JPS61222121A (ja) * 1985-03-27 1986-10-02 Canon Inc 機能性堆積膜及びその製造法と製造装置
US4937550A (en) * 1987-03-31 1990-06-26 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Strain sensor
WO1992005585A1 (en) * 1987-03-31 1992-04-02 Yoshihisa Tawada Distortion sensor
JPH06326304A (ja) * 1993-05-13 1994-11-25 Nec Corp 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140267A (en) * 1976-05-19 1977-11-22 Nippon Telegr & Teleph Corp <Ntt> Vapor epitaxial crystal growing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140267A (en) * 1976-05-19 1977-11-22 Nippon Telegr & Teleph Corp <Ntt> Vapor epitaxial crystal growing device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58164220A (ja) * 1982-03-24 1983-09-29 Sanyo Electric Co Ltd 非晶質半導体の製造方法
JPS61222121A (ja) * 1985-03-27 1986-10-02 Canon Inc 機能性堆積膜及びその製造法と製造装置
JPS61222280A (ja) * 1985-03-28 1986-10-02 Canon Inc 光起電力素子及びその製造法と製造装置
US4937550A (en) * 1987-03-31 1990-06-26 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Strain sensor
WO1992005585A1 (en) * 1987-03-31 1992-04-02 Yoshihisa Tawada Distortion sensor
JPH06326304A (ja) * 1993-05-13 1994-11-25 Nec Corp 半導体装置の製造方法
JPH0810765B2 (ja) * 1993-05-13 1996-01-31 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0324053B2 (ko) 1991-04-02

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