JPS57207173A - Magnetron sputtering device of magnetic field press contact type - Google Patents

Magnetron sputtering device of magnetic field press contact type

Info

Publication number
JPS57207173A
JPS57207173A JP9087581A JP9087581A JPS57207173A JP S57207173 A JPS57207173 A JP S57207173A JP 9087581 A JP9087581 A JP 9087581A JP 9087581 A JP9087581 A JP 9087581A JP S57207173 A JPS57207173 A JP S57207173A
Authority
JP
Japan
Prior art keywords
target
magnetic field
sputtering device
substrate
contact type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9087581A
Other languages
English (en)
Other versions
JPS6012426B2 (ja
Inventor
Tomonobu Hata
Nobuo Umemiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WAARUDO ENGINEERING KK
World Engineering Co
Original Assignee
WAARUDO ENGINEERING KK
World Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WAARUDO ENGINEERING KK, World Engineering Co filed Critical WAARUDO ENGINEERING KK
Priority to JP9087581A priority Critical patent/JPS6012426B2/ja
Publication of JPS57207173A publication Critical patent/JPS57207173A/ja
Publication of JPS6012426B2 publication Critical patent/JPS6012426B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP9087581A 1981-06-15 1981-06-15 磁界圧着形マグネトロンスパッタリング装置 Expired JPS6012426B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9087581A JPS6012426B2 (ja) 1981-06-15 1981-06-15 磁界圧着形マグネトロンスパッタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9087581A JPS6012426B2 (ja) 1981-06-15 1981-06-15 磁界圧着形マグネトロンスパッタリング装置

Publications (2)

Publication Number Publication Date
JPS57207173A true JPS57207173A (en) 1982-12-18
JPS6012426B2 JPS6012426B2 (ja) 1985-04-01

Family

ID=14010659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9087581A Expired JPS6012426B2 (ja) 1981-06-15 1981-06-15 磁界圧着形マグネトロンスパッタリング装置

Country Status (1)

Country Link
JP (1) JPS6012426B2 (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60121268A (ja) * 1983-12-01 1985-06-28 Kanazawa Daigaku 電磁界圧着型マグネトロンスパッタ源
JPS63247364A (ja) * 1987-04-01 1988-10-14 Hitachi Ltd スパツタ成膜方法と装置
US5496455A (en) * 1993-09-16 1996-03-05 Applied Material Sputtering using a plasma-shaping magnet ring
US5593551A (en) * 1993-05-05 1997-01-14 Varian Associates, Inc. Magnetron sputtering source for low pressure operation
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
US5744011A (en) * 1993-03-18 1998-04-28 Kabushiki Kaisha Toshiba Sputtering apparatus and sputtering method
US6352629B1 (en) * 2000-07-10 2002-03-05 Applied Materials, Inc. Coaxial electromagnet in a magnetron sputtering reactor
US6372098B1 (en) 2000-09-28 2002-04-16 The Boc Group, Inc. High target utilization magnet array and associated methods
US20080142359A1 (en) * 2002-08-01 2008-06-19 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US20110233058A1 (en) * 2010-03-26 2011-09-29 Cheng-Tsung Liu Magnetron Plasma Sputtering Apparatus
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
CN110073464A (zh) * 2017-03-31 2019-07-30 Ulvac韩国股份有限公司 磁铁结构体、磁铁单元及包括此的磁控管溅射装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6343466B2 (ja) * 1983-12-01 1988-08-30 Kanazawa Daigakucho
JPS60121268A (ja) * 1983-12-01 1985-06-28 Kanazawa Daigaku 電磁界圧着型マグネトロンスパッタ源
JPS63247364A (ja) * 1987-04-01 1988-10-14 Hitachi Ltd スパツタ成膜方法と装置
US5744011A (en) * 1993-03-18 1998-04-28 Kabushiki Kaisha Toshiba Sputtering apparatus and sputtering method
US5593551A (en) * 1993-05-05 1997-01-14 Varian Associates, Inc. Magnetron sputtering source for low pressure operation
US5496455A (en) * 1993-09-16 1996-03-05 Applied Material Sputtering using a plasma-shaping magnet ring
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
US6171461B1 (en) * 1996-03-07 2001-01-09 Mark A. Bernick Sputtering cathode
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6352629B1 (en) * 2000-07-10 2002-03-05 Applied Materials, Inc. Coaxial electromagnet in a magnetron sputtering reactor
US6372098B1 (en) 2000-09-28 2002-04-16 The Boc Group, Inc. High target utilization magnet array and associated methods
US20080142359A1 (en) * 2002-08-01 2008-06-19 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US9062372B2 (en) * 2002-08-01 2015-06-23 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US20110233058A1 (en) * 2010-03-26 2011-09-29 Cheng-Tsung Liu Magnetron Plasma Sputtering Apparatus
CN110073464A (zh) * 2017-03-31 2019-07-30 Ulvac韩国股份有限公司 磁铁结构体、磁铁单元及包括此的磁控管溅射装置
CN110073464B (zh) * 2017-03-31 2022-04-19 Ulvac韩国股份有限公司 磁铁结构体、磁铁单元及包括此的磁控管溅射装置

Also Published As

Publication number Publication date
JPS6012426B2 (ja) 1985-04-01

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