JPS57205895A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPS57205895A
JPS57205895A JP9039881A JP9039881A JPS57205895A JP S57205895 A JPS57205895 A JP S57205895A JP 9039881 A JP9039881 A JP 9039881A JP 9039881 A JP9039881 A JP 9039881A JP S57205895 A JPS57205895 A JP S57205895A
Authority
JP
Japan
Prior art keywords
transistor
electric potential
memory
time
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9039881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6321998B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9039881A priority Critical patent/JPS57205895A/ja
Priority to US06/337,969 priority patent/US4542485A/en
Priority to GB8200825A priority patent/GB2091459B/en
Priority to DE3249749A priority patent/DE3249749C2/de
Priority to DE3200976A priority patent/DE3200976C2/de
Publication of JPS57205895A publication Critical patent/JPS57205895A/ja
Priority to GB08415009A priority patent/GB2142795B/en
Priority to GB08415010A priority patent/GB2143698B/en
Publication of JPS6321998B2 publication Critical patent/JPS6321998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP9039881A 1981-01-14 1981-06-12 Nonvolatile semiconductor memory Granted JPS57205895A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP9039881A JPS57205895A (en) 1981-06-12 1981-06-12 Nonvolatile semiconductor memory
US06/337,969 US4542485A (en) 1981-01-14 1982-01-08 Semiconductor integrated circuit
GB8200825A GB2091459B (en) 1981-01-14 1982-01-12 Semiconductor integrated circuit
DE3249749A DE3249749C2 (enrdf_load_stackoverflow) 1981-01-14 1982-01-14
DE3200976A DE3200976C2 (de) 1981-01-14 1982-01-14 Integrierte Halbleiterschaltung
GB08415009A GB2142795B (en) 1981-01-14 1984-06-13 Semiconductor power down switching circuit
GB08415010A GB2143698B (en) 1981-01-14 1984-06-13 Semiconductor integrated memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9039881A JPS57205895A (en) 1981-06-12 1981-06-12 Nonvolatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS57205895A true JPS57205895A (en) 1982-12-17
JPS6321998B2 JPS6321998B2 (enrdf_load_stackoverflow) 1988-05-10

Family

ID=13997472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9039881A Granted JPS57205895A (en) 1981-01-14 1981-06-12 Nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57205895A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160097A (ja) * 1986-12-24 1988-07-02 Toshiba Corp 半導体不揮発性メモリ
US4864541A (en) * 1986-09-30 1989-09-05 Thomson Composants Militaires & Spaciaux Integrated circuit of the logic circuit type comprising an electrically programmable non-volatile memory
US6608781B1 (en) 1999-08-30 2003-08-19 Nec Electronics Corporation Nonvolatile semiconductor memory device applying positive source and substrate voltages during a programming period
WO2006001058A1 (ja) * 2004-06-25 2006-01-05 Spansion Llc 半導体装置及びソース電圧制御方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4864541A (en) * 1986-09-30 1989-09-05 Thomson Composants Militaires & Spaciaux Integrated circuit of the logic circuit type comprising an electrically programmable non-volatile memory
JPS63160097A (ja) * 1986-12-24 1988-07-02 Toshiba Corp 半導体不揮発性メモリ
US6608781B1 (en) 1999-08-30 2003-08-19 Nec Electronics Corporation Nonvolatile semiconductor memory device applying positive source and substrate voltages during a programming period
WO2006001058A1 (ja) * 2004-06-25 2006-01-05 Spansion Llc 半導体装置及びソース電圧制御方法
US7206232B2 (en) 2004-06-25 2007-04-17 Spansion Llc Semiconductor device and source voltage control method
JPWO2006001058A1 (ja) * 2004-06-25 2008-07-31 スパンション エルエルシー 半導体装置及びソース電圧制御方法
JP4680195B2 (ja) * 2004-06-25 2011-05-11 スパンション エルエルシー 半導体装置及びソース電圧制御方法

Also Published As

Publication number Publication date
JPS6321998B2 (enrdf_load_stackoverflow) 1988-05-10

Similar Documents

Publication Publication Date Title
EP1158532A3 (en) Semiconductor memory device
EP0031386A4 (en) Semiconductor memory device.
IT7823462A0 (it) Dispositivo di memoria a semiconduttore amorfo per l'impiego in una memoria di sola lettura alterabile elettricamente e piu'particolarmente una cella di dispositivo di memoria a semiconduttore amorfo per l'impiego in essa.
EP0374936A3 (en) Nonvolatile semiconductor memory system
GB1502270A (en) Word line driver circuit in memory circuit
JPS5771587A (en) Semiconductor storing device
EP0355768A3 (en) Semiconductor memory cells and semiconductor memory device employing the semiconductor memory cells
KR860008559A (ko) 반도체 기억장치
EP0137135A3 (en) Semiconductor memory
DE3684589D1 (de) Elektrisch aenderbare nichtfluechtige speicheranordnung.
JPS57205895A (en) Nonvolatile semiconductor memory
KR910005463A (ko) 정보를 일시적으로 유지할 수 있는 불휘발성 메모리 셀을 포함하는 집적회로
EP0393863A3 (en) Semiconductor memory device
EP0373672A3 (en) Semiconductor memory circuit having an improved restoring control circuit
JPS57113482A (en) Semiconductor storage device
TW353180B (en) A method and apparatus for bit cell ground choking for improved memory write margin
JPS57176587A (en) Semiconductor ram device
JPS5625292A (en) Memory circuit
JPS52129337A (en) Memory circuit
JPS5562588A (en) Semiconductor memory circuit
JPS5577088A (en) Nonvolatile semiconductor memory unit
JPS5778695A (en) Semiconductor storage device
JPS57130291A (en) Semiconductor nonvolatile read-only storage device
JPS5634184A (en) Semiconductor memory
JPS57208690A (en) Semiconductor storage device