JPS5720480A - Field effect type light detector - Google Patents

Field effect type light detector

Info

Publication number
JPS5720480A
JPS5720480A JP9507780A JP9507780A JPS5720480A JP S5720480 A JPS5720480 A JP S5720480A JP 9507780 A JP9507780 A JP 9507780A JP 9507780 A JP9507780 A JP 9507780A JP S5720480 A JPS5720480 A JP S5720480A
Authority
JP
Japan
Prior art keywords
drain
clearer
crystal
oxide film
given
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9507780A
Other languages
Japanese (ja)
Other versions
JPS6246991B2 (en
Inventor
Takashi Nishioka
Takeshi Kobayashi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9507780A priority Critical patent/JPS5720480A/en
Publication of JPS5720480A publication Critical patent/JPS5720480A/en
Publication of JPS6246991B2 publication Critical patent/JPS6246991B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To detect light with a high gain in a large wavelength range by providing an N<+> type source and drain on an Si substrate added to by impurities at a deep level while a clearer than opaque gate metal is provided on a channel region through a thermal oxide film. CONSTITUTION:An as impurity deep in an Si crystal is diffused for one hour at 1,000 deg.C to make a half-insulating Si substrate 1. An N<+> source and drain 2 and ohmic electrodes 3 and 4 are given by a widely known method and a clearer than opaque gate metal 7 is given on a thermal oxide film 6 to provide an electrode 5. With such an arrangement, the deep level diffusion in the crystal enebles the detection of far infrared rays while FET effect allows the amplification more than 100 times thereby dispencing with any pre-amplifier. Besides, the gate and drain voltages are operable below 5V, providing a higher utility.
JP9507780A 1980-07-14 1980-07-14 Field effect type light detector Granted JPS5720480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9507780A JPS5720480A (en) 1980-07-14 1980-07-14 Field effect type light detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9507780A JPS5720480A (en) 1980-07-14 1980-07-14 Field effect type light detector

Publications (2)

Publication Number Publication Date
JPS5720480A true JPS5720480A (en) 1982-02-02
JPS6246991B2 JPS6246991B2 (en) 1987-10-06

Family

ID=14127895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9507780A Granted JPS5720480A (en) 1980-07-14 1980-07-14 Field effect type light detector

Country Status (1)

Country Link
JP (1) JPS5720480A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147799U (en) * 1983-03-25 1984-10-02 石川島建材工業株式会社 concrete segment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147799U (en) * 1983-03-25 1984-10-02 石川島建材工業株式会社 concrete segment

Also Published As

Publication number Publication date
JPS6246991B2 (en) 1987-10-06

Similar Documents

Publication Publication Date Title
JPS55120182A (en) Photoelectric converter
JPS5642377A (en) Ultraviolet ray erasable type rewritable read-only memory
JPS5495116A (en) Solid image pickup unit
JPS5515229A (en) Semiconductor photograph device
JPS5720480A (en) Field effect type light detector
JPS57181176A (en) High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor
JPS567480A (en) Film transistor
JPS5694674A (en) Thin-film solar cell
JPS6452129A (en) Thin film transistor
JPS5771179A (en) Input protective circuit device
JPS5298480A (en) Semiconductor device
JPS5527950A (en) Semiconductor detector
JPS57107074A (en) Semiconductor device
JPS5586159A (en) Protective circuit for mos semiconductor device
JPS61105878A (en) Semiconductor light-receiving element
SU592754A1 (en) Method of concentrating mercury in lead
JPS5693368A (en) Mis transistor device
JPS5392672A (en) Analyzing method for defect of semiconductor element
JPS5718363A (en) Msis type semiconductor element
JPS5397781A (en) Production of semiconductor device
JPS575364A (en) Mos integrated circuit device
JPS57126170A (en) Semiconductor constant voltage device
JPS5451485A (en) Semiconductor device
JPS54107290A (en) Semiconductor photo sensing unit
JPS5632776A (en) Ccd image sensor