JPS5720446A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5720446A
JPS5720446A JP9460780A JP9460780A JPS5720446A JP S5720446 A JPS5720446 A JP S5720446A JP 9460780 A JP9460780 A JP 9460780A JP 9460780 A JP9460780 A JP 9460780A JP S5720446 A JPS5720446 A JP S5720446A
Authority
JP
Japan
Prior art keywords
film
films
sidewisely
oxidized
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9460780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6229915B2 (enrdf_load_stackoverflow
Inventor
Masafumi Shinpo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP9460780A priority Critical patent/JPS5720446A/ja
Publication of JPS5720446A publication Critical patent/JPS5720446A/ja
Publication of JPS6229915B2 publication Critical patent/JPS6229915B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9460780A 1980-07-11 1980-07-11 Manufacture of semiconductor device Granted JPS5720446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9460780A JPS5720446A (en) 1980-07-11 1980-07-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9460780A JPS5720446A (en) 1980-07-11 1980-07-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5720446A true JPS5720446A (en) 1982-02-02
JPS6229915B2 JPS6229915B2 (enrdf_load_stackoverflow) 1987-06-29

Family

ID=14114930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9460780A Granted JPS5720446A (en) 1980-07-11 1980-07-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5720446A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563337A (en) * 1994-10-12 1996-10-08 Diagnetics, Inc. Moisture monitor apparatus for a fluid system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563337A (en) * 1994-10-12 1996-10-08 Diagnetics, Inc. Moisture monitor apparatus for a fluid system

Also Published As

Publication number Publication date
JPS6229915B2 (enrdf_load_stackoverflow) 1987-06-29

Similar Documents

Publication Publication Date Title
JPS5720446A (en) Manufacture of semiconductor device
JPS56150860A (en) Manufacture of semiconductor memory device
JPS57100760A (en) Manufacture of semiconductor device
JPS55105364A (en) Semiconductor memory and its manufacture
JPS56133844A (en) Semiconductor device
JPS57106150A (en) Manufacture of semiconductor device
JPS55157265A (en) Manufacturing mthod for mos field-effect transistor
JPS577153A (en) Preparation of semiconductor device
JPS56150864A (en) Semiconductor device
JPS5723243A (en) Semiconductor integrated circuit
JPS5780776A (en) Mos field effect semiconductor device and manufacture thereof
JPS5646571A (en) Manufacture of solid image pickup element
JPS57113275A (en) Manufacture of semiconductor device
JPS52147983A (en) Insulation gate type semiconductor device
JPS55153370A (en) Manufacturing method of semiconductor device
JPS56162874A (en) Manufacture of mos semiconductor device
JPS57106076A (en) Manufacture of semiconductor integrated circuit device
JPS55130169A (en) Method of fabricating semiconductor device
JPS57114274A (en) Electrode for semiconductor device and manufacture thereof
JPS5745924A (en) Manufacture of semiconductor device
JPS5778148A (en) Manufacture of semiconductor device
JPS56146281A (en) Manufacture of semiconductor integrated circuit
KR880013236A (ko) 반도체 장치의 제조방법
JPS57122577A (en) Manufacture of semiconductor device
JPS5793575A (en) Semiconductor integrated circuit