JPS6229915B2 - - Google Patents

Info

Publication number
JPS6229915B2
JPS6229915B2 JP55094607A JP9460780A JPS6229915B2 JP S6229915 B2 JPS6229915 B2 JP S6229915B2 JP 55094607 A JP55094607 A JP 55094607A JP 9460780 A JP9460780 A JP 9460780A JP S6229915 B2 JPS6229915 B2 JP S6229915B2
Authority
JP
Japan
Prior art keywords
film
mask
region
nitride film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55094607A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5720446A (en
Inventor
Masafumi Shinho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP9460780A priority Critical patent/JPS5720446A/ja
Publication of JPS5720446A publication Critical patent/JPS5720446A/ja
Publication of JPS6229915B2 publication Critical patent/JPS6229915B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/202FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9460780A 1980-07-11 1980-07-11 Manufacture of semiconductor device Granted JPS5720446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9460780A JPS5720446A (en) 1980-07-11 1980-07-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9460780A JPS5720446A (en) 1980-07-11 1980-07-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5720446A JPS5720446A (en) 1982-02-02
JPS6229915B2 true JPS6229915B2 (enrdf_load_stackoverflow) 1987-06-29

Family

ID=14114930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9460780A Granted JPS5720446A (en) 1980-07-11 1980-07-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5720446A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563337A (en) * 1994-10-12 1996-10-08 Diagnetics, Inc. Moisture monitor apparatus for a fluid system

Also Published As

Publication number Publication date
JPS5720446A (en) 1982-02-02

Similar Documents

Publication Publication Date Title
US4692994A (en) Process for manufacturing semiconductor devices containing microbridges
US4545114A (en) Method of producing semiconductor device
JPS6146063A (ja) 半導体装置の製造方法
EP0078501A2 (en) Transistor-like semiconductor device and method of producing the same
JPH038343A (ja) バイポーラトランジスタとその製造方法
US4449284A (en) Method of manufacturing an integrated circuit device having vertical field effect transistors
JPS6229915B2 (enrdf_load_stackoverflow)
JPS6161539B2 (enrdf_load_stackoverflow)
JPS6237543B2 (enrdf_load_stackoverflow)
JPH05343413A (ja) バイポーラトランジスタとその製造方法
JPS6214103B2 (enrdf_load_stackoverflow)
JP2890550B2 (ja) 半導体装置の製造方法
JP2855981B2 (ja) 半導体装置の製造方法
JPS59182566A (ja) 半導体装置
JPH05218338A (ja) 半導体装置とその製造方法
JPS6281769A (ja) 電界効果トランジスタの製造方法
JPH0272632A (ja) 半導体装置の製造方法
JP3099450B2 (ja) 半導体装置およびその製造方法
JPH07249635A (ja) バイポーラ素子の埋込み層形成方法
JPH0342842A (ja) 半導体装置の製造方法
JPH0783023B2 (ja) 半導体装置の製造方法
JPH0154864B2 (enrdf_load_stackoverflow)
JPH054810B2 (enrdf_load_stackoverflow)
JPH01286464A (ja) 半導体装置の製造方法
JPH02148847A (ja) 半導体装置の製造方法