JPS6214103B2 - - Google Patents

Info

Publication number
JPS6214103B2
JPS6214103B2 JP54110892A JP11089279A JPS6214103B2 JP S6214103 B2 JPS6214103 B2 JP S6214103B2 JP 54110892 A JP54110892 A JP 54110892A JP 11089279 A JP11089279 A JP 11089279A JP S6214103 B2 JPS6214103 B2 JP S6214103B2
Authority
JP
Japan
Prior art keywords
region
gate
main electrode
impurity
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54110892A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5635458A (en
Inventor
Masafumi Shinho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP11089279A priority Critical patent/JPS5635458A/ja
Priority to GB8027685A priority patent/GB2057760B/en
Priority to US06/183,064 priority patent/US4449284A/en
Publication of JPS5635458A publication Critical patent/JPS5635458A/ja
Publication of JPS6214103B2 publication Critical patent/JPS6214103B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP11089279A 1979-08-30 1979-08-30 Manufacture of integrated circuit device Granted JPS5635458A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11089279A JPS5635458A (en) 1979-08-30 1979-08-30 Manufacture of integrated circuit device
GB8027685A GB2057760B (en) 1979-08-30 1980-08-27 Integrated circuit device and method of making the same
US06/183,064 US4449284A (en) 1979-08-30 1980-09-02 Method of manufacturing an integrated circuit device having vertical field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11089279A JPS5635458A (en) 1979-08-30 1979-08-30 Manufacture of integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5635458A JPS5635458A (en) 1981-04-08
JPS6214103B2 true JPS6214103B2 (enrdf_load_stackoverflow) 1987-03-31

Family

ID=14547324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11089279A Granted JPS5635458A (en) 1979-08-30 1979-08-30 Manufacture of integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5635458A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714399B2 (ja) * 1986-11-27 1995-02-22 政治 村井 インプラント材植設用溝の穿設装置
JPH07102215B2 (ja) * 1987-03-06 1995-11-08 株式会社ニコン 顎骨穿孔用ガイド装置
JPH07102216B2 (ja) * 1987-06-19 1995-11-08 株式会社ニコン 顎骨穿孔用ガイド装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235987A (en) * 1975-09-16 1977-03-18 Hitachi Ltd Semiconductor integrated circuit
JPS5492078A (en) * 1977-12-28 1979-07-20 Seiko Instr & Electronics Ltd Charge injection element

Also Published As

Publication number Publication date
JPS5635458A (en) 1981-04-08

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