JPS57204152A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the exfoliation of the edge section of a polyimide insulating film from a semiconductor layer or an inorganic insulator layer by positioning a substance layer having large adhesive property at a region in which the edge section and the semiconductor layer or the inorganic insulating film contact. CONSTITUTION:The lower layer insulating films 17 consisting of phosphorus silicide glass films, etc. are formed onto an N type Si epitaxial layer 13'. The first layer Al patterns 19a, 19b, 19c are shaped onto the films 17, and the polyimide layer insulating films 20 are further formed onto the patterns. The second layer Al wiring patterns 21a, 21b are shaped onto the films 20, and the surface is coated with a cover insulating film 23. Accordingly, the edge section 24 of the film 20 is coated with the layer 13' and the film 23 through the Al existing patterns 19b, 21b. The films 20 are not exfoliated from the layer 13' and the film 23 due to a thermal impact, etc. because adhesive strength to the Al layers of the polyimide layers is remarkably larger than the semiconductor layers or the inorganic insulator layers.