JPS57203290A - Ic memory - Google Patents

Ic memory

Info

Publication number
JPS57203290A
JPS57203290A JP56090102A JP9010281A JPS57203290A JP S57203290 A JPS57203290 A JP S57203290A JP 56090102 A JP56090102 A JP 56090102A JP 9010281 A JP9010281 A JP 9010281A JP S57203290 A JPS57203290 A JP S57203290A
Authority
JP
Japan
Prior art keywords
sense amplifiers
sense
time
write
refresh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56090102A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6223397B2 (enrdf_load_stackoverflow
Inventor
Koichiro Masuko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56090102A priority Critical patent/JPS57203290A/ja
Publication of JPS57203290A publication Critical patent/JPS57203290A/ja
Publication of JPS6223397B2 publication Critical patent/JPS6223397B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
JP56090102A 1981-06-09 1981-06-09 Ic memory Granted JPS57203290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56090102A JPS57203290A (en) 1981-06-09 1981-06-09 Ic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56090102A JPS57203290A (en) 1981-06-09 1981-06-09 Ic memory

Publications (2)

Publication Number Publication Date
JPS57203290A true JPS57203290A (en) 1982-12-13
JPS6223397B2 JPS6223397B2 (enrdf_load_stackoverflow) 1987-05-22

Family

ID=13989148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56090102A Granted JPS57203290A (en) 1981-06-09 1981-06-09 Ic memory

Country Status (1)

Country Link
JP (1) JPS57203290A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS581890A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd ダイナミツク半導体記憶装置の駆動方式
JPS6117292A (ja) * 1984-07-04 1986-01-25 Hitachi Ltd 半導体記憶装置
JPS61160894A (ja) * 1985-01-09 1986-07-21 Nec Corp 半導体メモリ
JPS61220192A (ja) * 1985-03-27 1986-09-30 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS62241198A (ja) * 1986-04-14 1987-10-21 Hitachi Ltd ダイナミツク型ｒａｍ
JPS62291792A (ja) * 1986-06-11 1987-12-18 Nec Corp ダイナミツク型半導体記憶装置
JPS63247995A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体記憶装置
JPS63275096A (ja) * 1987-05-06 1988-11-11 Mitsubishi Electric Corp 半導体記憶装置
JPS6484496A (en) * 1987-09-26 1989-03-29 Mitsubishi Electric Corp Semiconductor memory
US5719815A (en) * 1988-05-13 1998-02-17 Hitachi, Ltd. Semiconductor memory having a refresh operation cycle and operating at a high speed and reduced power consumption in a normal operation cycle
US5867436A (en) * 1986-07-30 1999-02-02 Mitsubishi Denki Kabushiki Kaisha Random access memory with a plurality amplifier groups for reading and writing in normal and test modes
US6049500A (en) * 1988-11-01 2000-04-11 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
US6212089B1 (en) 1996-03-19 2001-04-03 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS581890A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd ダイナミツク半導体記憶装置の駆動方式
JPS6117292A (ja) * 1984-07-04 1986-01-25 Hitachi Ltd 半導体記憶装置
JPS61160894A (ja) * 1985-01-09 1986-07-21 Nec Corp 半導体メモリ
JPS61220192A (ja) * 1985-03-27 1986-09-30 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPS62241198A (ja) * 1986-04-14 1987-10-21 Hitachi Ltd ダイナミツク型ｒａｍ
JPS62291792A (ja) * 1986-06-11 1987-12-18 Nec Corp ダイナミツク型半導体記憶装置
US5867436A (en) * 1986-07-30 1999-02-02 Mitsubishi Denki Kabushiki Kaisha Random access memory with a plurality amplifier groups for reading and writing in normal and test modes
JPS63247995A (ja) * 1987-04-03 1988-10-14 Mitsubishi Electric Corp 半導体記憶装置
JPS63275096A (ja) * 1987-05-06 1988-11-11 Mitsubishi Electric Corp 半導体記憶装置
JPS6484496A (en) * 1987-09-26 1989-03-29 Mitsubishi Electric Corp Semiconductor memory
US5862095A (en) * 1988-05-13 1999-01-19 Hitachi, Ltd. Semiconductor memory having both a refresh operation cycle and a normal operation cycle and employing an address non-multiplex system
US5719815A (en) * 1988-05-13 1998-02-17 Hitachi, Ltd. Semiconductor memory having a refresh operation cycle and operating at a high speed and reduced power consumption in a normal operation cycle
US6108264A (en) * 1988-05-13 2000-08-22 Hitachi, Ltd. Dynamic type semiconductor memory device
US6049500A (en) * 1988-11-01 2000-04-11 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
US6160744A (en) * 1988-11-01 2000-12-12 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
US6335884B1 (en) 1988-11-01 2002-01-01 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
US6515913B2 (en) 1988-11-01 2003-02-04 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
US6657901B2 (en) 1988-11-01 2003-12-02 Hitachi, Ltd. Semiconductor device formed in a rectangle region on a semiconductor substrate including a voltage generating circuit
US7016236B2 (en) 1988-11-01 2006-03-21 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
US7203101B2 (en) 1988-11-01 2007-04-10 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
US7499340B2 (en) 1988-11-01 2009-03-03 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
US6212089B1 (en) 1996-03-19 2001-04-03 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof

Also Published As

Publication number Publication date
JPS6223397B2 (enrdf_load_stackoverflow) 1987-05-22

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