JPS55122290A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55122290A
JPS55122290A JP2785179A JP2785179A JPS55122290A JP S55122290 A JPS55122290 A JP S55122290A JP 2785179 A JP2785179 A JP 2785179A JP 2785179 A JP2785179 A JP 2785179A JP S55122290 A JPS55122290 A JP S55122290A
Authority
JP
Japan
Prior art keywords
element group
line
decoder
memory element
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2785179A
Other languages
Japanese (ja)
Other versions
JPH034995B2 (en
Inventor
Kenji Anami
Osamu Tomizawa
Tadashi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2785179A priority Critical patent/JPS55122290A/en
Publication of JPS55122290A publication Critical patent/JPS55122290A/en
Publication of JPH034995B2 publication Critical patent/JPH034995B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To make selection of memory elements high-speed and reduce power consumption by constituting a device so that the word line of a nonselected memory element group may be prevented from being high. CONSTITUTION:The output of line decoder XD0 is high, and other line decoders XD1-XDn-1 are low, and MIS transistors TrTOR-T(n-1)R and QOL to Q(n-1)L are turned on, and MIS TrTOL to T(n-1)L and QOR-Q(n-1)R are turned off. As the result, no line decoder signal is transferred to memory element group 1 to make memory element group 1 nonselected. Meanwhile, though signals of all line decoders are transferred to memory element group 2, only word line WOR becomes high and all other word lines become low because the output of only decoder XD0 is high. Consequently, decoder XD0 drives only word line WOR in the selected 0th line of selected element group 2 and does not drive word line WOL of element group 1. As a result, the load capacity driven by the line decoder is only the one-side element group, so that the load capacity can be reduced to the half approximately.
JP2785179A 1979-03-09 1979-03-09 Semiconductor memory device Granted JPS55122290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2785179A JPS55122290A (en) 1979-03-09 1979-03-09 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2785179A JPS55122290A (en) 1979-03-09 1979-03-09 Semiconductor memory device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP58053390A Division JPS58179992A (en) 1983-03-28 1983-03-28 Semiconductor storage device
JP58053391A Division JPS58179993A (en) 1983-03-28 1983-03-28 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS55122290A true JPS55122290A (en) 1980-09-19
JPH034995B2 JPH034995B2 (en) 1991-01-24

Family

ID=12232416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2785179A Granted JPS55122290A (en) 1979-03-09 1979-03-09 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55122290A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593785A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor memory
JPS6326890A (en) * 1987-05-21 1988-02-04 Toshiba Corp Semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593785A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor memory
JPH041435B2 (en) * 1982-06-30 1992-01-13 Fujitsu Ltd
JPS6326890A (en) * 1987-05-21 1988-02-04 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPH034995B2 (en) 1991-01-24

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