JPS57200299A - Separating method of whisker grown in void of raw material - Google Patents

Separating method of whisker grown in void of raw material

Info

Publication number
JPS57200299A
JPS57200299A JP11472281A JP11472281A JPS57200299A JP S57200299 A JPS57200299 A JP S57200299A JP 11472281 A JP11472281 A JP 11472281A JP 11472281 A JP11472281 A JP 11472281A JP S57200299 A JPS57200299 A JP S57200299A
Authority
JP
Japan
Prior art keywords
raw material
whiskers
gas
organic liquid
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11472281A
Other languages
Japanese (ja)
Other versions
JPS6037079B2 (en
Inventor
Minoru Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tateho Chemical Industries Co Ltd
Original Assignee
Tateho Chemical Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateho Chemical Industries Co Ltd filed Critical Tateho Chemical Industries Co Ltd
Priority to JP11472281A priority Critical patent/JPS6037079B2/en
Publication of JPS57200299A publication Critical patent/JPS57200299A/en
Publication of JPS6037079B2 publication Critical patent/JPS6037079B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0685—Preparation by carboreductive nitridation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To separate whiskers grown efficiently in a mixed state in a raw material effectively from the raw material, by dispersing a raw material in which the whiskers are grown in voids with a mixture of a hydrophobic organic liquid with water.
CONSTITUTION: A nonoxidizing gas except N2 and a nitriding gas is passed through a carbonized material of chaff kept at a high temperature to grow silicon carbide whiskers on the inside and the outside thereof. The carbonized material is then kept at a high temperature, and N2 gas or NH3 gas is passed through the material to grow silicon nitride whiskers on the inside and the outside. During this time, the carbon plays a role in the shape retention of the chaff. The raw material taken out of the furnace contains the mutually entangled and joined whiskers, is poured in water and loosened with gentle stirring. A hydrophobic organic liquid, e.g. kerosine, is added thereto, and the mixture is stirred and allowed to stand. The whiskers remain in the water side at the bottom, and the raw material is transferred to the organic liquid side and separated.
COPYRIGHT: (C)1982,JPO&Japio
JP11472281A 1981-07-21 1981-07-21 Separation method for whiskers grown in voids in raw materials Expired JPS6037079B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11472281A JPS6037079B2 (en) 1981-07-21 1981-07-21 Separation method for whiskers grown in voids in raw materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11472281A JPS6037079B2 (en) 1981-07-21 1981-07-21 Separation method for whiskers grown in voids in raw materials

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8309581A Division JPS6037078B2 (en) 1981-05-29 1981-05-29 Method for manufacturing silicon nitride whiskers

Publications (2)

Publication Number Publication Date
JPS57200299A true JPS57200299A (en) 1982-12-08
JPS6037079B2 JPS6037079B2 (en) 1985-08-23

Family

ID=14644977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11472281A Expired JPS6037079B2 (en) 1981-07-21 1981-07-21 Separation method for whiskers grown in voids in raw materials

Country Status (1)

Country Link
JP (1) JPS6037079B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7166523B2 (en) * 2000-08-10 2007-01-23 Hoya Corporation Silicon carbide and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020157932A1 (en) * 2019-01-31 2020-08-06 富士通フロンテック株式会社 Self-payment system, management device, terminal management method, and program

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7166523B2 (en) * 2000-08-10 2007-01-23 Hoya Corporation Silicon carbide and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6037079B2 (en) 1985-08-23

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