JPS55140797A - Single crystal manufacturing device - Google Patents

Single crystal manufacturing device

Info

Publication number
JPS55140797A
JPS55140797A JP4892779A JP4892779A JPS55140797A JP S55140797 A JPS55140797 A JP S55140797A JP 4892779 A JP4892779 A JP 4892779A JP 4892779 A JP4892779 A JP 4892779A JP S55140797 A JPS55140797 A JP S55140797A
Authority
JP
Japan
Prior art keywords
hole
gas
inflow
crystal
vol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4892779A
Other languages
Japanese (ja)
Other versions
JPS5715079B2 (en
Inventor
Hiroshi Hirata
Keigo Hoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4892779A priority Critical patent/JPS55140797A/en
Publication of JPS55140797A publication Critical patent/JPS55140797A/en
Publication of JPS5715079B2 publication Critical patent/JPS5715079B2/ja
Granted legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To enhance the quality of a single crystal by separating or linking a plurality of atmospheric gas inflow pipes arranged coaxially with a rotary shaft for holding a seed crystal to adjust the flow rate of atmospheric gas.
CONSTITUTION: As growth of single crystal 10 proceeds and the top of crystal 10 approaches pulling and inflow hole 12', the opening area of hole 12' reduces gradually. Therefore, in the early stage of pulling of crystal 10 the inflow vol. of atmospheric gas from hole 12' is increased, and the inflow vol. of the gas from inflow hole 17' is decreased. As crystal 10 grows, the inflow vol. of the gas from hole 12' and that of the gas from hole 17' are controlled, and in the latter half stage of growth the inflow vol. of the gas from hole 17' is made larger than that of the gas from hole 12'. Accordingly, reaction product gas is well exhausted at all times, so the atmosphere in the vicinity of the melt surface and the solid-liq. interface is always maintained clean to enhance the quality of the grown crystal.
COPYRIGHT: (C)1980,JPO&Japio
JP4892779A 1979-04-21 1979-04-21 Single crystal manufacturing device Granted JPS55140797A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4892779A JPS55140797A (en) 1979-04-21 1979-04-21 Single crystal manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4892779A JPS55140797A (en) 1979-04-21 1979-04-21 Single crystal manufacturing device

Publications (2)

Publication Number Publication Date
JPS55140797A true JPS55140797A (en) 1980-11-04
JPS5715079B2 JPS5715079B2 (en) 1982-03-27

Family

ID=12816885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4892779A Granted JPS55140797A (en) 1979-04-21 1979-04-21 Single crystal manufacturing device

Country Status (1)

Country Link
JP (1) JPS55140797A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor

Also Published As

Publication number Publication date
JPS5715079B2 (en) 1982-03-27

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