RU95117198A - METHOD FOR PRODUCING REFRACTORY MATERIAL BASED ON SILICON AND SILICON CARBIDE - Google Patents

METHOD FOR PRODUCING REFRACTORY MATERIAL BASED ON SILICON AND SILICON CARBIDE

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Publication number
RU95117198A
RU95117198A RU95117198/03A RU95117198A RU95117198A RU 95117198 A RU95117198 A RU 95117198A RU 95117198/03 A RU95117198/03 A RU 95117198/03A RU 95117198 A RU95117198 A RU 95117198A RU 95117198 A RU95117198 A RU 95117198A
Authority
RU
Russia
Prior art keywords
silicon
silicon carbide
refractory material
material based
producing refractory
Prior art date
Application number
RU95117198/03A
Other languages
Russian (ru)
Other versions
RU2095332C1 (en
Inventor
В.В. Дигонский
С.В. Дигонский
В.Е. Горбовской
Е.Д. Кравцов
Original Assignee
Санкт-Петербургский государственный горный институт им.Г.В.Плеханова (технический университет)
Filing date
Publication date
Application filed by Санкт-Петербургский государственный горный институт им.Г.В.Плеханова (технический университет) filed Critical Санкт-Петербургский государственный горный институт им.Г.В.Плеханова (технический университет)
Priority to RU95117198A priority Critical patent/RU2095332C1/en
Priority claimed from RU95117198A external-priority patent/RU2095332C1/en
Publication of RU95117198A publication Critical patent/RU95117198A/en
Application granted granted Critical
Publication of RU2095332C1 publication Critical patent/RU2095332C1/en

Links

Claims (2)

1. Способ получения огнеупорного материала на основе карбида кремния и кремния, включающий его насыщение парами и/или расплавом кремния, отличающийся тем, что карбид кремния и кремний засыпают в форму из углеродсодержащего материала, например, графита, и растворяют карбид кремния в кремний в восстановительной атмосфере при температуре 2150 - 2250oС.1. A method of obtaining a refractory material based on silicon carbide and silicon, including its saturation with vapors and / or a molten silicon, characterized in that silicon carbide and silicon are filled into a mold from a carbon-containing material, for example graphite, and dissolve silicon carbide in silicon in a reducing atmosphere at a temperature of 2150 - 2250 o C. 2. Способ по п. 1, отличающийся тем, что карбид кремния и кремний засыпают в углеродсодержащую форму, придающую засыпке конфигурацию изделия. 2. The method according to p. 1, characterized in that the silicon carbide and silicon are poured into a carbon-containing form, giving the product configuration backfill.
RU95117198A 1995-10-09 1995-10-09 Method of manufacturing refractory based on silicon carbide and silicon RU2095332C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU95117198A RU2095332C1 (en) 1995-10-09 1995-10-09 Method of manufacturing refractory based on silicon carbide and silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU95117198A RU2095332C1 (en) 1995-10-09 1995-10-09 Method of manufacturing refractory based on silicon carbide and silicon

Publications (2)

Publication Number Publication Date
RU95117198A true RU95117198A (en) 1997-09-20
RU2095332C1 RU2095332C1 (en) 1997-11-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU95117198A RU2095332C1 (en) 1995-10-09 1995-10-09 Method of manufacturing refractory based on silicon carbide and silicon

Country Status (1)

Country Link
RU (1) RU2095332C1 (en)

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