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Application filed by 한형수, 삼성코닝 주식회사filedCritical한형수
Priority to KR1019890019245ApriorityCriticalpatent/KR910012346A/en
Publication of KR910012346ApublicationCriticalpatent/KR910012346A/en
단결정 성장용 원료봉의 제조방법Manufacturing method of raw material rod for single crystal growth
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도는 본 발명에 의한 원료봉의 제조방법을 나타낸 장치도로서, 가)는 초기상태도이고, 나)는 하부의 일부가 응용된 상태도이며,다)는 완전히 용융된 상태도.3 is an apparatus diagram showing a method for manufacturing a raw material rod according to the present invention, a) is an initial state diagram, b) is a state diagram in which a part of the lower part is applied, and c) is a completely melted state diagram.
Claims (3)
부유대역용융법에 의해 단결정성장용 원료봉을 제소하는 방법에 있어서, 부유대역 용융장치의 하부 지지대 상부에 설치된 주형에 입상의 다결정원료을 장입하여 반응기 외부의 가열장치로 입상의 다결정 원료를 하부로부터 서서히 용융시켜 봉상의 단결정 성장용 원료봉이 제조되도록 하는 것을 특징으로 하는 단결정 성장용 원료봉 제조방법.In the method for suing single-crystal growth raw material rod by the floating-band melting method, granular polycrystalline raw material is charged into a mold installed on the upper part of the lower support of the floating-band melting apparatus, and the granular polycrystalline raw material is gradually transferred from the lower portion to the heating device outside the reactor. A method of manufacturing a raw material rod for single crystal growth, characterized in that the melting of the rod-like raw material growth rod for the single crystal growth.제1항에 있어서, 가열장치로 고주파 유도가열 방식을 사용하고 그 주파수 영역을 2-5MHZ로 하는 것을 특징으로 하는 단결정 성장용 원료봉의 제조방법.The method of manufacturing a raw material rod for single crystal growth according to claim 1, wherein a high frequency induction heating method is used as a heating device, and the frequency range thereof is 2-5 MH Z.제1항에 있어서, 다결정 용융시 하부지지대 또는 가열장치를 0.1~10㎜/min의 속도로 이동되도록 한 것을 특징으로 하는 단결정 성장용 원료봉의 제조방법.The method of manufacturing a raw material rod for single crystal growth according to claim 1, wherein the lower support or the heating device is moved at a speed of 0.1 to 10 mm / min during polycrystalline melting.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890019245A1989-12-221989-12-22
Manufacturing method of raw material rod for single crystal growth
KR910012346A
(en)