JPS57199289A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS57199289A
JPS57199289A JP8524581A JP8524581A JPS57199289A JP S57199289 A JPS57199289 A JP S57199289A JP 8524581 A JP8524581 A JP 8524581A JP 8524581 A JP8524581 A JP 8524581A JP S57199289 A JPS57199289 A JP S57199289A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
wave guide
band width
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8524581A
Other languages
Japanese (ja)
Inventor
Shigeyoshi Ogata
Toshio Tanaka
Toshio Sogo
Saburo Takamiya
Noritoshi Nakama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8524581A priority Critical patent/JPS57199289A/en
Publication of JPS57199289A publication Critical patent/JPS57199289A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure

Abstract

PURPOSE:To reduce the threshold values making the laser beam narrower by a method wherein the forbidded band width of the semiconductor wave guide layer is a bit wider than that of the semiconductor active layer while the forbidden band width of the semiconductor wave guide layer and the semiconductor active layer is made a bit narrower than that of the semiconductor layer. CONSTITUTION:The forbidded band width of the AlGaAs wave guide layer 16 is made a bit wider than that of the GaAs active layer 5 while the forbidded band width of said layers 16 and 3 is made a bit narrower than that of the AlGaAs layer 4. Through these procedures, a part of the laser beam emitted from the active region is exuded into he light wave guide channel subject to almost no absorption loss. Consequently the luminous region emitting the laser beam is expanded to reduce the light density facilitating the high luminous output operation.
JP8524581A 1981-06-01 1981-06-01 Semiconductor laser Pending JPS57199289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8524581A JPS57199289A (en) 1981-06-01 1981-06-01 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8524581A JPS57199289A (en) 1981-06-01 1981-06-01 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57199289A true JPS57199289A (en) 1982-12-07

Family

ID=13853173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8524581A Pending JPS57199289A (en) 1981-06-01 1981-06-01 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57199289A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106081A (en) * 1988-10-14 1990-04-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
US5073895A (en) * 1990-04-18 1991-12-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106081A (en) * 1988-10-14 1990-04-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
US5073895A (en) * 1990-04-18 1991-12-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser

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