JPS648680A - Semiconductor light emitting device - Google Patents

Abstract

PURPOSE:To effectively suppress a laser operation, and to obtain a light emitting diode useful for an optical communication, an optical measurement and the like by forming an absorption layer made of a fourth semiconductor smaller than a semiconductor in which a forbidden band width forms an active layer on the end face of an edge emission type light emitting diode from which light is not output. CONSTITUTION:An absorption region 8 made of a fourth semiconductor not larger than a semiconductor in which a forbidden band width forms an active layer 3 is formed in opposite contact with a face 31 from which a light is not output in a layer direction of the layer 3 and upper and lower clad layers 2, 4. The light irradiated to the region 8 of the light radiated from the layer 3 is not only attenuated but positively absorbed, and leakage lights from the layers 2, 4 are leaked to the region 8. Accordingly, since this leakage light is positively absorbed to the region 8, its reflected light becomes extremely small, and its gain is largely reduced to suppress a laser operation.