JPS5680193A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5680193A
JPS5680193A JP15739279A JP15739279A JPS5680193A JP S5680193 A JPS5680193 A JP S5680193A JP 15739279 A JP15739279 A JP 15739279A JP 15739279 A JP15739279 A JP 15739279A JP S5680193 A JPS5680193 A JP S5680193A
Authority
JP
Japan
Prior art keywords
semiconductor laser
optical fiber
coherence
reflecting surface
reflexibility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15739279A
Other languages
Japanese (ja)
Inventor
Kenichi Sato
Koichi Asatani
Tetsuya Miki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15739279A priority Critical patent/JPS5680193A/en
Publication of JPS5680193A publication Critical patent/JPS5680193A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Light Guides In General And Applications Therefor (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To lower the coherence of a semiconductor laser by a method wherein one section of light projecting from the semiconductor laser is fed back to an active layer of the semiconductor laser by using an optical fiber and a reflecting surface with constant reflexibility. CONSTITUTION:An optical fiber 9 for a transmission path is connected to one end surface of a semiconductor laser 1 with a laser active layer 2, and an optical fiber 3 with a reflecting surface 5 formed so as to have constant reflexibility to semiconductor laser rays is connected to the other end surface. Light projecting from the semiconductor laser 1 is focussed to the optical fiber 3, propagated in the optical fiber 3, reflected by means of the reflecting surface 5 and fed back to the semiconductor laser 1. The width of an oscillating spectrum of the semiconductor laser is expanded by the feedback, a distance of the coherence of the semiconductor laser is shortened (coherence is lowered), and the deterioration of a transmitting characteristic and a noise characteristic is reduced.
JP15739279A 1979-12-06 1979-12-06 Semiconductor laser device Pending JPS5680193A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15739279A JPS5680193A (en) 1979-12-06 1979-12-06 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15739279A JPS5680193A (en) 1979-12-06 1979-12-06 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5680193A true JPS5680193A (en) 1981-07-01

Family

ID=15648624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15739279A Pending JPS5680193A (en) 1979-12-06 1979-12-06 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5680193A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58109272U (en) * 1982-01-20 1983-07-25 日本電気株式会社 semiconductor laser equipment
JPS58125245A (en) * 1982-01-22 1983-07-26 Hitachi Ltd Optical pickup device
JPS58175149A (en) * 1982-04-07 1983-10-14 Hitachi Ltd Optical pickup device
JPS58188342A (en) * 1982-04-28 1983-11-02 Hitachi Ltd Noise reducing method of semiconductor laser light
JPS5938941A (en) * 1982-08-25 1984-03-03 Hitachi Ltd Semiconductor laser device
JPS60136276A (en) * 1983-12-23 1985-07-19 Fujitsu Ltd Semiconductor laser device
WO1997032373A1 (en) * 1996-03-01 1997-09-04 Agfa-Gevaert Aktiengesellschaft Method and device for operating a laser diode
JP2017005127A (en) * 2015-06-11 2017-01-05 株式会社島津製作所 Laser device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134593A (en) * 1975-05-17 1976-11-22 Nec Corp Semiconductor lesser device which can perform high-speed modulation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134593A (en) * 1975-05-17 1976-11-22 Nec Corp Semiconductor lesser device which can perform high-speed modulation

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58109272U (en) * 1982-01-20 1983-07-25 日本電気株式会社 semiconductor laser equipment
JPS58125245A (en) * 1982-01-22 1983-07-26 Hitachi Ltd Optical pickup device
JPH0585970B2 (en) * 1982-01-22 1993-12-09 Hitachi Ltd
JPS58175149A (en) * 1982-04-07 1983-10-14 Hitachi Ltd Optical pickup device
JPH0580055B2 (en) * 1982-04-07 1993-11-05 Hitachi Ltd
JPS58188342A (en) * 1982-04-28 1983-11-02 Hitachi Ltd Noise reducing method of semiconductor laser light
JPS5938941A (en) * 1982-08-25 1984-03-03 Hitachi Ltd Semiconductor laser device
JPS60136276A (en) * 1983-12-23 1985-07-19 Fujitsu Ltd Semiconductor laser device
WO1997032373A1 (en) * 1996-03-01 1997-09-04 Agfa-Gevaert Aktiengesellschaft Method and device for operating a laser diode
JP2017005127A (en) * 2015-06-11 2017-01-05 株式会社島津製作所 Laser device

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